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SMC30J130A

STMicroelectronics

SMC30J130A by STMicroelectronics

SMC30J130A by STMicroelectronics is a unidirectional transient voltage suppressor diode designed for robust protection in electronic circuits. It features a max reverse power dissipation of 3000 W, breakdown voltage range of 144-160 V, and operates from -55 °C to 175 °C. Ideal for safeguarding sensitive components against voltage spikes, it meets IEC and MIL standards.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,819 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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4,819

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Digiode

USA . 3,103 parts In-Stock

1+ parts

-

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-

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3,103

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Anansix

USA . 2,431 parts In-Stock

1+ parts

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2,431

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,932 parts In-Stock

1+ parts

$0.103

100+ parts

-

1k+ parts

$0.093

10k+ parts

-

1,932

$0.103

-

$0.093

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MKK Technologies

India . 2,165 parts In-Stock

1+ parts

$0.194

100+ parts

-

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10k+ parts

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2,165

$0.194

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DigiPath Technology Company

USA . 2,165 parts In-Stock

1+ parts

$0.194

100+ parts

-

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-

10k+ parts

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2,165

$0.194

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-

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Component Stockers USA

USA . 4,563 parts In-Stock

1+ parts

$6.020

100+ parts

-

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10k+ parts

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4,563

$6.020

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AZTECH Wire

Italy . 49 parts In-Stock

1+ parts

$14.120

100+ parts

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49

$14.120

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Corphita

USA . 2,800 parts In-Stock

1+ parts

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2,800

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Parana Technologies

USA . 20 parts In-Stock

1+ parts

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100+ parts

$0.123

1k+ parts

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20

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$0.123

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Overview

Elevate your designs with the SMC30J130A from STMicroelectronics, a leader in innovation and quality. This robust transient suppression device ensures exceptional protection for sensitive electronics against voltage spikes, making it ideal for automotive, industrial, and consumer applications. With its reliable performance and high power dissipation capability, you can trust that your systems will remain safe and efficient, delivering peace of mind and superior longevity. Experience unmatched reliability and safeguard your innovations today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and resistance to environmental factors, making the device reliable in various applications.

Config: SINGLE

A single configuration simplifies the integration into circuits, ensuring ease of use and reduced design complexity.

Surface Mount: YES

Surface mount capability facilitates efficient assembly on PCB, allowing for compact designs and improved space utilization.

Maximum Non Repetitive Peak Reverse Power Dissipation: 3000 W

High power dissipation rating enhances the device's ability to handle surge conditions, ensuring protection for sensitive components.

Nominal Breakdown Voltage: 152 V

The nominal breakdown voltage offers reliable clamping while protecting against voltage spikes in typical applications.

Maximum Reverse Current: 0.2 µA

Very low reverse current minimizes leakage, making this device suitable for power-sensitive applications.

Package Shape: RECTANGULAR

The rectangular shape aids in standardized mounting and compatibility with various PCB layouts.

Reverse Test Voltage: 130 V

This reverse test voltage indicates the robustness of the device against transient events.

No. of Terminals: 2

The two-terminal design supports simple connections, enhancing usability and reducing potential for error during installation.

Package Style (Meter): SMALL OUTLINE

The small outline package enables high-density board layouts, suitable for modern compact electronic designs.

Maximum Operating Temperature: 175 °C

The high operating temperature rating ensures reliable performance in demanding thermal environments.

Minimum Operating Temperature: -55 °C

A wide temperature range allows for use in extreme conditions, making it versatile for various applications.

Terminal Position: DUAL

Dual terminal position provides flexibility in placement on the PCB, aiding in design optimization.

Minimum Breakdown Voltage: 144 V

The minimum breakdown voltage ensures operation within safe limits, crucial for protecting sensitive circuits.

Maximum Breakdown Voltage: 160 V

A maximum breakdown voltage provides an added safety margin, enhancing reliability during voltage spikes.

Reference Standard: IEC-61000-4-2, 4-4, 4-5; MIL-STD-750; MIL-STD-883

Adherence to these standards assures customers of quality and compliance, promoting trust in application-specific environments.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a transient voltage suppressor, this diode effectively protects sensitive electronics from voltage transients.

Technology: AVALANCHE

Utilizing avalanche technology ensures quick response times to transient events, significantly enhancing protection.

Terminal Form: C BEND

The C bend terminal form is designed for better stability during PCB assembly and soldering processes.

Maximum Repetitive Peak Reverse Voltage: 130 V

This voltage rating confirms suitability for various electronic applications, ensuring safe operation under expected conditions.

Polarity: UNIDIRECTIONAL

Unidirectional design simplifies circuit integration, preventing errors during installation or use.

Maximum Clamping Voltage: 209 V

A low maximum clamping voltage minimizes the impact on sensitive circuits during a surge, offering added protection.

Diode Element Material: SILICON

Silicon enhances reliability and performance, making this device an excellent choice for effective transient suppression.

Technical Specifications

Transient Suppression Devices SMC30J130A attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

160 V

Minimum Breakdown Voltage:

144 V

Nominal Breakdown Voltage:

152 V

Maximum Clamping Voltage:

209 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Reverse Power Dissipation:

3000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-4, 4-5; MIL-STD-750; MIL-STD-883

Maximum Repetitive Peak Reverse Voltage:

130 V

Maximum Reverse Current:

.2 uA

Reverse Test Voltage:

130 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SMC30J130A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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