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SM4T47AY

STMicroelectronics

SM4T47AY by STMicroelectronics

SM4T47AY by STMicroelectronics is a single avalanche diode with a max power dissipation of 400W and breakdown voltage of 46.7V, ideal for transient suppression in automotive applications. With a unidirectional polarity and matte tin terminal finish, it operates b/w -55°C to 150°C, meeting AEC-Q101 standards.

Median Price

$0.232

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 5,528 parts In-Stock

1+ parts

$0.880

100+ parts

$0.531

1k+ parts

$0.407

10k+ parts

$0.345

5,528

$0.880

$0.531

$0.407

$0.345

Rochester

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

$0.175

1k+ parts

$0.146

10k+ parts

$0.130

15,000

-

$0.175

$0.146

$0.130

Verical

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.162

15,000

-

-

-

$0.162

Arrow

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.290

10,000

-

-

-

$0.290

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,555 parts In-Stock

1+ parts

$0.147

100+ parts

-

1k+ parts

-

10k+ parts

-

1,555

$0.147

-

-

-

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.406

100+ parts

-

1k+ parts

-

10k+ parts

-

300

$0.406

-

-

-

Bristol Electronics

USA . 7,530 parts In-Stock

1+ parts

$1.035

100+ parts

$0.383

1k+ parts

$0.269

10k+ parts

-

7,530

$1.035

$0.383

$0.269

-

Vyrian

USA . 12,877 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,877

-

-

-

-

IBS Electronics

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.163

10,000

-

-

-

$0.163

Dan-Mar Components

USA . 7,530 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,530

-

-

-

-

Anansix

USA . 423 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

423

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 424 parts In-Stock

1+ parts

$0.016

100+ parts

-

1k+ parts

$0.014

10k+ parts

-

424

$0.016

-

$0.014

-

MKK Technologies

India . 210 parts In-Stock

1+ parts

$0.029

100+ parts

-

1k+ parts

-

10k+ parts

-

210

$0.029

-

-

-

DigiPath Technology Company

USA . 210 parts In-Stock

1+ parts

$0.029

100+ parts

-

1k+ parts

-

10k+ parts

-

210

$0.029

-

-

-

Ampacity Inc.

Singapore . 11,460 parts In-Stock

1+ parts

$0.132

100+ parts

-

1k+ parts

-

10k+ parts

-

11,460

$0.132

-

-

-

Corphita

USA . 2,505 parts In-Stock

1+ parts

$0.140

100+ parts

-

1k+ parts

-

10k+ parts

-

2,505

$0.140

-

-

-

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.406

100+ parts

-

1k+ parts

$0.385

10k+ parts

$0.377

2,000

$0.406

-

$0.385

$0.377

Continental Prestige Electronics

USA . 1,714 parts In-Stock

1+ parts

$0.406

100+ parts

-

1k+ parts

-

10k+ parts

$0.398

1,714

$0.406

-

-

$0.398

Argo Parts USA

USA . 1,313 parts In-Stock

1+ parts

$0.406

100+ parts

-

1k+ parts

-

10k+ parts

$0.393

1,313

$0.406

-

-

$0.393

Perfect Parts

USA . 22,389 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

22,389

-

-

-

-

Parana Technologies

USA . 1,702 parts In-Stock

1+ parts

-

100+ parts

$0.019

1k+ parts

-

10k+ parts

-

1,702

-

$0.019

-

-

Overview

Experience superior transient suppression with the SM4T47AY by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality products that are designed for reliability and performance. This Transient Suppression Device is ideal for a wide range of applications, offering protection against voltage spikes and surges. With its high power dissipation capability and low reverse current, this product provides peace of mind for your electronic systems. Trust STMicroelectronics to provide you with the best-in-class solutions for your protection needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and reliability to the device.

Config: SINGLE

The single configuration simplifies installation and maintenance of the device.

Surface Mount: YES

The surface mount capability allows for easy and efficient PCB assembly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 400 W

The high power dissipation capability ensures the device can handle surge protection effectively.

Nominal Breakdown Voltage: 46.7 V

The precise breakdown voltage helps in protecting sensitive components from overvoltage events.

Maximum Reverse Current: 0.2 uA

The low reverse current ensures minimal power consumption during normal operation.

Package Shape: RECTANGULAR

The rectangular shape of the package provides efficient use of board space.

Reverse Test Voltage: 40 V

The reverse test voltage ensures reliable reverse voltage protection.

No. of Terminals: 2

The two terminals provide easy connection to the circuit.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for high component density on the PCB.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range ensures reliability in harsh environments.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature range allows for use in extended temperature environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and reliability.

Terminal Position: DUAL

The dual terminal position offers flexibility in mounting options.

Minimum Breakdown Voltage: 44.4 V

The minimum breakdown voltage protects against lower voltage transients.

Maximum Breakdown Voltage: 49 V

The maximum breakdown voltage ensures protection against higher voltage transients.

Reference Standard: AEC-Q101

Complies with automotive application standards for reliability and performance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Utilizes trans voltage suppressor diode technology for effective transient suppression.

Technology: AVALANCHE

The use of avalanche technology ensures fast response to transient events.

Terminal Form: C BEND

The C bend terminal form provides mechanical stability and ease of installation.

Maximum Repetitive Peak Reverse Voltage: 40 V

The maximum repetitive peak reverse voltage protects against continuous voltage spikes.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures protection in one direction only.

Maximum Clamping Voltage: 84 V

The maximum clamping voltage limits the output voltage during transient events.

Diode Element Material: SILICON

The use of silicon as the diode element material provides high efficiency and reliability.

Technical Specifications

Transient Suppression Devices SM4T47AY attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

49 V

Minimum Breakdown Voltage:

44.4 V

Nominal Breakdown Voltage:

46.7 V

Maximum Clamping Voltage:

84 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AC

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

.2 uA

Reverse Test Voltage:

40 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SM4T47AY Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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