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SM4T15

STMicroelectronics

SM4T15 by STMicroelectronics

SM4T15 by STMicroelectronics is a single avalanche diode with 15V breakdown voltage and 400W peak power dissipation. Ideal for transient suppression in applications requiring unidirectional polarity, such as protecting electronic circuits from voltage spikes. Package style: small outline, surface mountable, with max operating temperature of 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,024 parts In-Stock

1+ parts

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4,024

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Vyrian

USA . 2,903 parts In-Stock

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2,903

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Anansix

USA . 1,669 parts In-Stock

1+ parts

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1,669

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,972 parts In-Stock

1+ parts

$0.040

100+ parts

-

1k+ parts

$0.036

10k+ parts

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1,972

$0.040

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$0.036

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MKK Technologies

India . 703 parts In-Stock

1+ parts

$0.076

100+ parts

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703

$0.076

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DigiPath Technology Company

USA . 703 parts In-Stock

1+ parts

$0.076

100+ parts

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703

$0.076

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Kepictronics

USA . 88,000 parts In-Stock

1+ parts

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88,000

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Corphita

USA . 3,202 parts In-Stock

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3,202

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Parana Technologies

USA . 284 parts In-Stock

1+ parts

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100+ parts

$0.048

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284

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$0.048

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Overview

Enhance your electronic devices with the SM4T15 by STMicroelectronics, a top-tier manufacturer of cutting-edge transient suppression devices. Ideal for protecting sensitive components from voltage spikes, this product offers unparalleled quality and reliability. Whether you're safeguarding automotive electronics or industrial equipment, the SM4T15 provides peace of mind with its high-performance capabilities. Upgrade your protection with STMicroelectronics and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides excellent insulation and protection for the device, making it durable and long-lasting.

Config: SINGLE

Simplifies installation and maintenance, reducing the chances of errors in setup.

Surface Mount: YES

Easily mounted on circuit boards, saving space and enhancing overall design aesthetics.

Maximum Non Repetitive Peak Reverse Power Dissipation: 400 W

Can handle high transient power surges effectively, ensuring protection for connected devices.

Nominal Breakdown Voltage: 15 V

Offers reliable voltage protection at a specified level, preventing damage to sensitive components.

Maximum Reverse Current: 5 uA

Ensures minimal leakage current in the off state, enhancing the efficiency of the device.

Package Shape: RECTANGULAR

Facilitates easy integration into existing circuit layouts, optimizing space utilization.

No. of Terminals: 2

Simplifies connection requirements, making the device user-friendly and convenient to use.

Package Style (Meter): SMALL OUTLINE

Enhances portability and flexibility in installation options, catering to various application needs.

Maximum Operating Temperature: 150 °C

Maintains stability and performance under high-temperature conditions, ensuring reliability.

Terminal Position: DUAL

Allows for versatile mounting orientations, improving installation flexibility.

Maximum Power Dissipation: 5 W

Efficiently dissipates excess power during transient events, safeguarding connected devices.

Minimum Breakdown Voltage: 14.3 V

Ensures quick response and activation during voltage surges, enhancing protection capabilities.

Maximum Breakdown Voltage: 16.5 V

Handles higher voltage levels without compromising protection, ensuring robust performance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient suppression applications, offering enhanced functionality.

Technology: AVALANCHE

Utilizes avalanche breakdown for superior voltage clamping, providing effective transient protection.

Terminal Form: C BEND

Facilitates secure and reliable connections, minimizing the risk of disconnection issues.

Maximum Repetitive Peak Reverse Voltage: 12 V

Maintains voltage rating within safe limits during continuous operation, ensuring device longevity.

Polarity: UNIDIRECTIONAL

Offers protection in one direction, suitable for applications where unidirectional suppression is sufficient.

Minimum Diode Capacitance: 1200 pF

Provides fast response time to transient events, enhancing overall protection efficiency.

Maximum Clamping Voltage: 27.2 V

Limits the voltage spike to a safe level, preventing damage to downstream components.

Diode Element Material: SILICON

Utilizes silicon for robust and reliable diode performance, ensuring consistent protection.

Technical Specifications

Transient Suppression Devices SM4T15 attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

16.5 V

Minimum Breakdown Voltage:

14.3 V

Nominal Breakdown Voltage:

15 V

Maximum Clamping Voltage:

27.2 V

Config:

SINGLE

Minimum Diode Capacitance:

1200 pF

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

12 V

Maximum Reverse Current:

5 uA

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

SM4T15 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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