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SM4T12

STMicroelectronics

SM4T12 by STMicroelectronics

SM4T12 by STMicroelectronics is a single avalanche diode with 12V breakdown voltage, 400W peak power dissipation, and 5uA reverse current. It is used for transient suppression in applications requiring unidirectional protection against voltage spikes.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,894 parts In-Stock

1+ parts

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2,894

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Vyrian

USA . 2,279 parts In-Stock

1+ parts

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2,279

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Digiode

USA . 1,099 parts In-Stock

1+ parts

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1,099

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,933 parts In-Stock

1+ parts

$0.164

100+ parts

-

1k+ parts

$0.147

10k+ parts

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1,933

$0.164

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$0.147

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MKK Technologies

India . 2,115 parts In-Stock

1+ parts

$0.308

100+ parts

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2,115

$0.308

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DigiPath Technology Company

USA . 2,115 parts In-Stock

1+ parts

$0.308

100+ parts

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2,115

$0.308

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Kepictronics

USA . 88,000 parts In-Stock

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88,000

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Corphita

USA . 1,792 parts In-Stock

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1,792

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Parana Technologies

USA . 1,559 parts In-Stock

1+ parts

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100+ parts

$0.196

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1,559

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$0.196

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Overview

Unleash the power of protection with the SM4T12 by STMicroelectronics, a cutting-edge transient suppression device that guarantees unparalleled quality and reliability. Manufactured by industry leader STMicroelectronics, this product offers customers peace of mind with its superior performance in safeguarding electronic circuits from voltage spikes. Ideal for a wide range of applications, the SM4T12 provides maximum protection with minimal power dissipation, making it the ultimate choice for those who value efficiency and effectiveness in their electronics. Trust STMicroelectronics to deliver top-notch products that prioritize your safety and satisfaction.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the device.

Config: SINGLE

The single configuration simplifies installation and usage of the device.

Surface Mount: YES

The surface mount capability allows for easy and efficient integration in circuit boards.

Maximum Non Repetitive Peak Reverse Power Dissipation: 400 W

The high peak power dissipation rating ensures the device can handle sudden surges effectively.

Nominal Breakdown Voltage: 12 V

The breakdown voltage specification indicates the level at which the device will start to conduct, providing protection for sensitive components.

Maximum Reverse Current: 5 uA

The low reverse current helps to minimize power loss and improve overall efficiency.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement on circuit boards while optimizing space.

No. of Terminals: 2

Having only 2 terminals simplifies the wiring and connection process.

Package Style (Meter): SMALL OUTLINE

The small outline package style helps in saving space and can be easily integrated into compact electronic devices.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures the device can withstand harsh environments without malfunctioning.

Terminal Position: DUAL

The dual terminal position provides flexibility in the placement and orientation of the device.

Maximum Power Dissipation: 5 W

The high power dissipation rating allows for efficient handling of power surges and spikes.

Minimum Breakdown Voltage: 11.4 V

The minimum breakdown voltage specification provides a safety margin for protection against overvoltage conditions.

Maximum Breakdown Voltage: 13.2 V

The maximum breakdown voltage indicates the level at which the device will conduct and protect against voltage spikes.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The Trans Voltage Suppressor diode type is specifically designed for transient suppression applications, ensuring reliable protection.

Technology: AVALANCHE

The avalanche technology allows for high energy absorption and fast response to transient events.

Terminal Form: C BEND

The C bend terminal form ensures secure and stable connections in the circuit.

Maximum Repetitive Peak Reverse Voltage: 9.7 V

The high repetitive peak reverse voltage rating makes the device suitable for applications with varying voltage levels.

Polarity: UNIDIRECTIONAL

The unidirectional polarity provides protection in one direction, ideal for specific applications where protection is required only in a single direction.

Minimum Diode Capacitance: 1550 pF

The low diode capacitance helps in fast response times and minimizes signal distortion in the circuit.

Maximum Clamping Voltage: 21.7 V

The maximum clamping voltage indicates the level at which the device will limit the voltage spikes, providing effective protection to downstream components.

Diode Element Material: SILICON

The silicon diode element material ensures reliability and high performance in transient suppression applications.

Technical Specifications

Transient Suppression Devices SM4T12 attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

13.2 V

Minimum Breakdown Voltage:

11.4 V

Nominal Breakdown Voltage:

12 V

Maximum Clamping Voltage:

21.7 V

Config:

SINGLE

Minimum Diode Capacitance:

1550 pF

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

9.7 V

Maximum Reverse Current:

5 uA

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

SM4T12 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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