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M34F04-WMN6G

STMicroelectronics

M34F04-WMN6G by STMicroelectronics

M34F04-WMN6G by STMicroelectronics is an EEPROM with 512x8 organization, I2C control byte 1010DDMR, and 1000000 write/erase cycles endurance. It operates in industrial temperature grade range (-40 to 85 °C) and uses serial bus type I2C for applications requiring reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,527 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,527

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Vyrian

USA . 2,695 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,695

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-

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Anansix

USA . 1,096 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,096

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,494 parts In-Stock

1+ parts

$4.908

100+ parts

-

1k+ parts

$4.417

10k+ parts

-

1,494

$4.908

-

$4.417

-

MKK Technologies

India . 1,302 parts In-Stock

1+ parts

$9.230

100+ parts

-

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-

10k+ parts

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1,302

$9.230

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DigiPath Technology Company

USA . 1,302 parts In-Stock

1+ parts

$9.230

100+ parts

-

1k+ parts

-

10k+ parts

-

1,302

$9.230

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-

-

Corphita

USA . 2,223 parts In-Stock

1+ parts

-

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2,223

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Parana Technologies

USA . 1,184 parts In-Stock

1+ parts

-

100+ parts

$5.868

1k+ parts

-

10k+ parts

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1,184

-

$5.868

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Overview

Unlock the power of reliable data storage with the M34F04-WMN6G EEPROM by STMicroelectronics. This high-quality memory IC offers a wide range of industrial applications, from consumer electronics to automotive systems. With 1,000,000 write/erase cycles and a wide operating temperature range, this EEPROM is built to last. Trust in STMicroelectronics' reputation for excellence in semiconductor manufacturing and invest in the value and benefits that the M34F04-WMN6G brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and protection for the EEPROM chip, making it suitable for various environmental conditions.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving space and simplifying assembly processes.

Power Supplies (V): 2.7/5

Compatible with a wide range of power supplies, providing flexibility in different system designs.

No. of Terminals: 8

A moderate number of terminals for connectivity, allowing for versatile integration into electronic devices.

Maximum Operating Temperature: 85 °C

Can operate effectively in high-temperature environments, ensuring reliable performance under stress.

Organization: 512X8

Offers a good memory organization, providing sufficient storage capacity for data retention and retrieval.

Write Protection: HARDWARE

Enhances data security by allowing users to protect their stored information from unauthorized access or modification.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed, contributing to energy efficiency and fast data processing.

Memory Density: 4096 bit

Provides a high memory density, enabling storage of a large amount of data in a compact EEPROM chip.

Memory IC Type: EEPROM

As an EEPROM (Electrically Erasable Programmable Read-Only Memory) chip, it allows for non-volatile data storage and reprogramming capabilities.

Technical Specifications

EEPROM M34F04-WMN6G attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDMR

JESD-30 Code:

R-PDSO-G8

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

8

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Power Supplies (V):

2.7/5

Qualification:

Not Qualified

Serial Bus Type:

I2C

Maximum Standby Current:

.0000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

1 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Write Protection:

HARDWARE

Trade Compliance

M34F04-WMN6G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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