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BYW99W-200

STMicroelectronics

BYW99W-200 by STMicroelectronics

BYW99W-200 diode by STMicroelectronics features a common cathode configuration with 2 elements. It has a max reverse recovery time of 0.04 us and can handle a max output current of 15 A. Ideal for efficiency applications, this rectifier diode operates b/w -40 to 150 °C temperature range.

Median Price

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Lifecycle Status

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12

In-Stock Inventory

1k+

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Vyrian

USA . 4,930 parts In-Stock

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Anansix

USA . 1,288 parts In-Stock

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Digiode

USA . 587 parts In-Stock

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Lakeland Logistics Inc

USA . 150 parts In-Stock

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150

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EMSNET

USA . 97 parts In-Stock

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Sea View Technologies

USA . 88 parts In-Stock

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88

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Bristol Electronics

USA . 88 parts In-Stock

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88

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ComSIT Distribution GmbH

Germany . 60 parts In-Stock

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Prism Electronics

USA . 20 parts In-Stock

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PC Components Company LLC

USA . 18 parts In-Stock

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Microfarads

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LittleDiode

UK . 6 parts In-Stock

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IDEA Electronic Components Group

UK . 2,181 parts In-Stock

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$0.082

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$0.074

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MKK Technologies

India . 2,060 parts In-Stock

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$0.154

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DigiPath Technology Company

USA . 2,060 parts In-Stock

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Native Components

USA . 720 parts In-Stock

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$0.301

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$0.289

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$0.289

Northwest PG Solutions

USA . 773 parts In-Stock

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$0.331

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AZTECH Wire

Italy . 1,096 parts In-Stock

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Authorized Procurement Solutions

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Kepictronics

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A-Z Elektronik GmbH

Germany . 5,175 parts In-Stock

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Corphita

USA . 2,613 parts In-Stock

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Parana Technologies

USA . 637 parts In-Stock

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$0.098

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Perfect Parts

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GreenTree Electronics

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Overview

Experience unparalleled efficiency and reliability with the BYW99W-200 by STMicroelectronics. As a leader in the industry, STMicroelectronics ensures top-notch quality in all their products. This diode & rectifier boasts a fast reverse recovery time, making it ideal for applications where efficiency is key. With a maximum output current of 15A and a maximum repetitive peak reverse voltage of 200V, this product offers unmatched performance and durability. Upgrade your electronics with the BYW99W-200 and enjoy seamless operation and peace of mind knowing you have a trusted product from a reputable manufacturer like STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diodes, making them durable and reliable for long-term use.

Maximum Reverse Recovery Time: 0.04 us

Fast reverse recovery time ensures efficient switching and reduces power loss in high-frequency applications.

Maximum Forward Voltage (VF): 1.15 V

Low forward voltage drop ensures minimal power loss and high efficiency in the circuit.

Maximum Output Current: 15 A

High output current capability allows the diodes to handle heavy loads without overheating.

Maximum Repetitive Peak Reverse Voltage: 200 V

Suitable for applications where a high peak reverse voltage is required, providing versatility and reliability.

Technical Specifications

Diodes & Rectifiers BYW99W-200 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.15 V

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.04 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BYW99W-200 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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