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BYW92-200R

STMicroelectronics

BYW92-200R by STMicroelectronics

BYW92-200R by STMicroelectronics is a single rectifier diode with a max reverse recovery time of 0.05 us and max output current of 35 A. It is designed for efficiency applications, with a max power dissipation of 50 W and operating temperature range from -40 to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,568 parts In-Stock

1+ parts

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2,568

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Anansix

USA . 1,715 parts In-Stock

1+ parts

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1,715

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Digiode

USA . 485 parts In-Stock

1+ parts

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485

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ECAB

Sweden . 18 parts In-Stock

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18

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 608 parts In-Stock

1+ parts

$0.056

100+ parts

-

1k+ parts

$0.051

10k+ parts

-

608

$0.056

-

$0.051

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MKK Technologies

India . 1,643 parts In-Stock

1+ parts

$0.106

100+ parts

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1,643

$0.106

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DigiPath Technology Company

USA . 1,643 parts In-Stock

1+ parts

$0.106

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1,643

$0.106

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Native Components

USA . 98 parts In-Stock

1+ parts

$0.350

100+ parts

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$0.336

98

$0.350

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-

$0.336

Northwest PG Solutions

USA . 2,207 parts In-Stock

1+ parts

$0.385

100+ parts

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$0.339

2,207

$0.385

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$0.339

Corphita

USA . 3,697 parts In-Stock

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3,697

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Parana Technologies

USA . 316 parts In-Stock

1+ parts

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100+ parts

$0.067

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316

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$0.067

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Overview

Unlock the potential of your electronic devices with the high-quality BYW92-200R diode rectifier by STMicroelectronics. Manufactured with precision and reliability in mind, this product offers unparalleled efficiency in various applications. With a maximum power dissipation of 50W and a maximum forward voltage of 1.3V, customers can trust in the superior performance and durability of this product. Whether you're looking to improve the efficiency of your electronics or enhance their functionality, the BYW92-200R is the perfect solution for all your needs. Experience the value and benefits that this diode rectifier brings to your projects today.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides durability and efficient heat dissipation, making the diode more reliable and long-lasting.

Maximum Reverse Recovery Time: 0.05 us

This fast reverse recovery time ensures efficient switching and reduces power loss in the circuit.

Maximum Reverse Current: 50 uA

Low reverse current ensures minimal power dissipation and improves the overall efficiency of the diode.

Application: EFFICIENCY

Designed specifically for efficiency, this diode is suitable for applications where power efficiency is crucial.

Maximum Operating Temperature: 150 °C

High operating temperature range allows the diode to operate in a wide range of environments without performance degradation.

Maximum Power Dissipation: 50 W

High power dissipation capability ensures the diode can handle high power levels without getting damaged.

Maximum Forward Voltage (VF): 1.3 V

Low forward voltage drop ensures minimal energy loss and improves the overall efficiency of the circuit.

Maximum Output Current: 35 A

High output current capability makes this diode suitable for applications requiring high current handling.

Maximum Repetitive Peak Reverse Voltage: 200 V

High reverse voltage rating makes this diode suitable for applications where high voltage spikes are expected.

Technical Specifications

Diodes & Rectifiers BYW92-200R attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Case Connection:

ANODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JESD-30 Code:

O-MUPM-D1

Maximum Non Repetitive Peak Forward Current:

500 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

35 A

Package Body Material:

METAL

Package Shape:

Package Style (Meter):

POST/STUD MOUNT

Maximum Power Dissipation:

50 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

50 uA

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BYW92-200R Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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