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BYW98-150

STMicroelectronics

BYW98-150 by STMicroelectronics

BYW98-150 by STMicroelectronics is a silicon rectifier diode designed for efficiency, featuring a max reverse recovery time of 0.035 µs and a peak reverse voltage of 150 V. It operates b/w -40 °C to 150°C with a forward voltage drop of just 1.1 V. Ideal for applications requiring reliable power management in compact designs.

Median Price

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Lifecycle Status

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6

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1k+

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ECAB

Sweden . 4,530 parts In-Stock

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Anansix

USA . 1,274 parts In-Stock

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Digiode

USA . 744 parts In-Stock

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ComSIT Distribution GmbH

Germany . 330 parts In-Stock

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J2 Sourcing AB

Sweden . 176 parts In-Stock

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Vyrian

USA . 165 parts In-Stock

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IDEA Electronic Components Group

UK . 951 parts In-Stock

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$0.038

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$0.034

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951

$0.038

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MKK Technologies

India . 1,180 parts In-Stock

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$0.071

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$0.071

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DigiPath Technology Company

USA . 1,180 parts In-Stock

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$0.071

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Native Components

USA . 170 parts In-Stock

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$1.480

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Northwest PG Solutions

USA . 1,834 parts In-Stock

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$1.628

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Corphita

USA . 4,983 parts In-Stock

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Assy Fe

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Kepictronics

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Parana Technologies

USA . 173 parts In-Stock

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Overview

Unlock superior performance with the BYW98-150 diode from STMicroelectronics. Renowned for its quality, this robust rectifier diode ensures exceptional efficiency across diverse applications, even in extreme temperatures. With a quick recovery time and minimal reverse current, it enhances circuit reliability, making it ideal for automotive, industrial, and consumer electronics. Choose BYW98-150 for unparalleled durability and peace of mind supported by STMicroelectronics’ industry-leading expertise.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and resistance to environmental factors, making it suitable for a wide range of applications.

Config: SINGLE

A single configuration allows for ease of integration into circuits while maintaining simplicity in design and layout.

Maximum Reverse Recovery Time: 0.035 us

The low reverse recovery time of 0.035 microseconds enhances the efficiency of the device, making it ideal for high-frequency applications.

Maximum Reverse Current: 10 uA

With a maximum reverse current of only 10 microamperes, this diode minimizes leakage, improving overall circuit performance and reliability.

Package Shape: ROUND

The round package shape allows for efficient heat dissipation and easy mounting, which is beneficial in compact designs.

No. of Terminals: 2

Having two terminals simplifies connection to PCBs and other components, making assembly and installation easier.

Package Style (Meter): LONG FORM

The long-form package style provides ample space for proper thermal management and makes handling and soldering more convenient.

Application: EFFICIENCY

Designed for efficiency, this product is capable of reducing power losses in electrical circuits, contributing to energy-saving applications.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures up to 150 °C makes this diode suitable for environments with elevated thermal conditions.

Minimum Operating Temperature: -40 °C

With the capability to function as low as -40 °C, this diode can perform reliably in extreme conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish ensures good solderability and durability, making it reliable for long-term usage.

Terminal Position: AXIAL

Axial terminal position allows for easier alignment in perf boards and PCBs, simplifying the assembly process.

Case Connection: ISOLATED

An isolated case connection reduces the risk of electrical interference and enhances safety in circuit applications.

Maximum Power Dissipation: 2.5 W

With a power dissipation capacity of 2.5 watts, this diode efficiently handles significant power loads, making it suitable for various applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts alternating current (AC) to direct current (DC), which is essential for power supply circuits.

Maximum Forward Voltage (VF): 1.1 V

A maximum forward voltage drop of 1.1 volts ensures minimal energy loss during operation, enhancing efficiency.

Maximum Output Current: 3 A

With a maximum output current of 3 amps, this diode is suitable for applications that require significant current handling.

Terminal Form: WIRE

Wire terminal form allows for flexible installation options and easy integration into various circuit layouts.

Maximum Repetitive Peak Reverse Voltage: 150 V

The high peak reverse voltage rating of 150 volts indicates this diode can withstand significant voltage spikes, improving circuit robustness.

Maximum Non-Repetitive Peak Forward Current: 70 A

The ability to handle up to 70 amps of non-repetitive peak forward current ensures resilience against inrush current scenarios.

Diode Element Material: SILICON

Silicon as the diode element material contributes to its excellent electrical properties and overall reliability.

Technical Specifications

Diodes & Rectifiers BYW98-150 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.1 V

JEDEC-95 Code:

DO-27

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

70 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

2.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

150 V

Maximum Reverse Current:

10 uA

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Trade Compliance

BYW98-150 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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