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BYT75-400

STMicroelectronics

BYT75-400 by STMicroelectronics

STMicroelectronics BYT75-400 is a SINGLE RECTIFIER DIODE with 400V peak reverse voltage, 120A output current, and 0.3us reverse recovery time. Ideal for high-power applications requiring fast switching capabilities in surface-mount configurations up to 125 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,686 parts In-Stock

1+ parts

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2,686

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Digiode

USA . 2,201 parts In-Stock

1+ parts

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2,201

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Vyrian

USA . 107 parts In-Stock

1+ parts

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107

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,618 parts In-Stock

1+ parts

$0.047

100+ parts

-

1k+ parts

$0.042

10k+ parts

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1,618

$0.047

-

$0.042

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MKK Technologies

India . 1,913 parts In-Stock

1+ parts

$0.088

100+ parts

-

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1,913

$0.088

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DigiPath Technology Company

USA . 1,913 parts In-Stock

1+ parts

$0.088

100+ parts

-

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1,913

$0.088

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Native Components

USA . 508 parts In-Stock

1+ parts

$70.430

100+ parts

-

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10k+ parts

$67.613

508

$70.430

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-

$67.613

Northwest PG Solutions

USA . 380 parts In-Stock

1+ parts

$77.473

100+ parts

-

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380

$77.473

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Corphita

USA . 3,184 parts In-Stock

1+ parts

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3,184

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Parana Technologies

USA . 1,631 parts In-Stock

1+ parts

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100+ parts

$0.056

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1,631

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$0.056

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Overview

The BYT75-400 by STMicroelectronics is a top-of-the-line rectifier diode that guarantees high-quality performance and reliability. Manufactured by STMicroelectronics, a trusted name in the industry, this diode offers unmatched value and benefits to customers. With a maximum output current of 120 A and a maximum repetitive peak reverse voltage of 400 V, this diode is perfect for a wide range of applications in various industries. Say goodbye to worries about overheating or slow recovery time - the BYT75-400 ensures efficient operation with a maximum reverse recovery time of 0.3 us and a maximum operating temperature of 125 °C. Trust STMicroelectronics to deliver exceptional products that exceed expectations.

Feature Benefit Bullets

Config: SINGLE

Having a single configuration simplifies the design and installation process, making it easier to integrate this diode rectifier into existing systems.

Surface Mount: YES

Being surface mountable allows for a compact and space-saving installation, making this diode rectifier suitable for applications where space is limited.

Maximum Reverse Recovery Time: 0.3 us

With a fast reverse recovery time, this diode rectifier is efficient in switching and can help improve the overall performance of the circuit it is used in.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C ensures the reliability and stability of this diode rectifier even in demanding and high-temperature environments.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting alternating current (AC) to direct current (DC) efficiently, making it ideal for power supply applications.

Maximum Forward Voltage (VF): 1.4 V

Having a low forward voltage drop of 1.4 volts results in minimal power loss and helps in maximizing the efficiency of the circuit where this diode rectifier is used.

Maximum Output Current: 120 A

With a high maximum output current of 120 amperes, this diode rectifier can handle large loads and provide reliable power conversion capabilities.

Maximum Repetitive Peak Reverse Voltage: 400 V

The high repetitive peak reverse voltage rating of 400 volts ensures the protection of the circuit against voltage spikes and surges, making this diode rectifier a reliable choice for various applications.

Technical Specifications

Diodes & Rectifiers BYT75-400 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

1.4 V

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

120 A

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Recovery Time:

.3 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Trade Compliance

BYT75-400 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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