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BYT71F200

STMicroelectronics

BYT71F200 by STMicroelectronics

STMicroelectronics' BYT71F200 is a single rectifier diode with 0.3us reverse recovery time, 1.4V forward voltage, and 6A output current. Operating up to 150 °C, it has a max reverse voltage of 200V. Ideal for power supply and industrial applications due to its high efficiency and reliability.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,708 parts In-Stock

1+ parts

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1,708

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Vyrian

USA . 419 parts In-Stock

1+ parts

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419

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Digiode

USA . 340 parts In-Stock

1+ parts

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340

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,845 parts In-Stock

1+ parts

$0.124

100+ parts

-

1k+ parts

$0.112

10k+ parts

-

1,845

$0.124

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$0.112

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MKK Technologies

India . 1,812 parts In-Stock

1+ parts

$0.234

100+ parts

-

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1,812

$0.234

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DigiPath Technology Company

USA . 1,812 parts In-Stock

1+ parts

$0.234

100+ parts

-

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1,812

$0.234

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Northwest PG Solutions

USA . 131 parts In-Stock

1+ parts

$2.835

100+ parts

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131

$2.835

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Corphita

USA . 1,690 parts In-Stock

1+ parts

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1,690

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Parana Technologies

USA . 1,635 parts In-Stock

1+ parts

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100+ parts

$0.148

1k+ parts

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1,635

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$0.148

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Native Components

USA . 872 parts In-Stock

1+ parts

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$2.500

10k+ parts

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872

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$2.500

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Overview

Discover the unmatched quality and reliability of the BYT71F200 by STMicroelectronics, a leading manufacturer in the industry. This single rectifier diode offers fast reverse recovery time and a maximum output current of 6A, making it perfect for a wide range of applications. From power supplies to automotive electronics, this diode provides exceptional performance and efficiency. Trust STMicroelectronics to deliver cutting-edge technology that exceeds expectations and provides value to customers seeking superior components for their projects.

Feature Benefit Bullets

Maximum Reverse Recovery Time: 0.3 us

This short recovery time ensures fast switching speeds, making the diode suitable for high frequency applications.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows the diode to function effectively in a variety of environments, increasing its versatility.

Terminal Finish: Matte Tin (Sn)

Matte tin finish provides good solderability and corrosion resistance, ensuring a reliable connection and longevity of the diode.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting alternating current (AC) to direct current (DC), making them ideal for power supply applications.

Maximum Forward Voltage (VF): 1.4 V

The low forward voltage drop ensures minimal power loss and high efficiency in the circuit where the diode is used.

Maximum Output Current: 6 A

With a high maximum output current rating, this diode can handle substantial amounts of current flow, making it suitable for power electronics applications.

Maximum Repetitive Peak Reverse Voltage: 200 V

The high repetitive peak reverse voltage rating makes the diode suitable for applications where reverse voltage spikes may occur, providing overvoltage protection.

Technical Specifications

Diodes & Rectifiers BYT71F200 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

1.4 V

JESD-609 Code:

e3

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

6 A

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.3 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Trade Compliance

BYT71F200 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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