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BYT60P-200

STMicroelectronics

BYT60P-200 by STMicroelectronics

BYT60P-200 by STMicroelectronics is a fast recovery rectifier diode with a max reverse voltage of 200 V and forward current of 60 A. It features a compact flange mount design, operating b/w -40 °C to 150°C. Ideal for high-efficiency power applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Digiode

USA . 3,347 parts In-Stock

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Vyrian

USA . 2,749 parts In-Stock

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2,749

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Anansix

USA . 192 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 8 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 391 parts In-Stock

1+ parts

$0.182

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$0.164

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391

$0.182

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$0.164

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MKK Technologies

India . 1,390 parts In-Stock

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$0.343

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$0.343

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DigiPath Technology Company

USA . 1,390 parts In-Stock

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$0.343

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1,390

$0.343

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Native Components

USA . 695 parts In-Stock

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$0.800

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695

$0.800

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Northwest PG Solutions

USA . 2,023 parts In-Stock

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$0.880

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$0.880

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Corphita

USA . 2,163 parts In-Stock

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Parana Technologies

USA . 1,722 parts In-Stock

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$0.218

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Overview

Unlock superior performance with the BYT60P-200 rectifier diode from STMicroelectronics. Engineered for fast recovery and exceptional reliability, this powerhouse enhances efficiency in demanding applications like power supplies and inverters. With a robust design capable of handling extreme temperatures and high currents, you’ll benefit from reduced downtime and improved system longevity. Trust STMicroelectronics for quality that drives innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making it suitable for various applications.

Config: SINGLE

A single configuration simplifies circuit design and reduces complexity in applications.

Maximum Reverse Recovery Time: 0.1 us

A fast reverse recovery time enhances efficiency, making this diode ideal for high-speed switching applications.

Maximum Reverse Current: 60 uA

Low reverse current minimizes power losses and improves overall energy efficiency.

Package Shape: RECTANGULAR

The rectangular shape enables easy mounting and integration into various circuit layouts.

No. of Terminals: 2

Having two terminals allows for straightforward installation and makes it versatile for different electronic designs.

Package Style (Meter): FLANGE MOUNT

Flange mount provides secure attachment, ensuring stable performance in high vibration environments.

Application: FAST RECOVERY

Designed for fast recovery, this diode is optimal for applications requiring rapid switching and minimal delay.

Maximum Operating Temperature: 150 °C

A high operating temperature rating ensures reliability in extreme conditions, expanding application possibilities.

Minimum Operating Temperature: -40 °C

With a wide temperature range, this diode can function effectively in harsh environments.

Terminal Position: SINGLE

Single terminal positioning simplifies PCB layout and can be beneficial in space-constrained applications.

Case Connection: CATHODE

Cathode connection is standard in many applications, making it versatile for various circuit requirements.

Maximum Power Dissipation: 100 W

High power dissipation capability allows for better handling of larger currents without overheating.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts AC to DC, making it essential for power supply circuits.

Maximum Forward Voltage (VF): 1.5 V

Low forward voltage drop ensures higher efficiency in power conversion and enhances thermal performance.

Maximum Output Current: 60 A

High output current capacity ensures that this diode can handle demanding applications with ease.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical stability, making this product suitable for high-reliability applications.

Maximum Repetitive Peak Reverse Voltage: 200 V

A high peak reverse voltage rating expands its usability in various circuit designs, allowing for robust performance.

Maximum Non-Repetitive Peak Forward Current: 550 A

The capability to handle high peak currents makes it ideal for applications experiencing occasional surges.

Diode Element Material: SILICON

Silicon is a widely used semiconductor material, ensuring proven reliability and performance in electronic components.

Technical Specifications

Diodes & Rectifiers BYT60P-200 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

JESD-30 Code:

R-PSFM-T2

Maximum Non Repetitive Peak Forward Current:

550 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

60 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

100 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

60 uA

Maximum Reverse Recovery Time:

.1 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BYT60P-200 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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