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BYT61-1000R

STMicroelectronics

BYT61-1000R by STMicroelectronics

STMicroelectronics BYT61-1000R is a single rectifier diode with 1000V reverse voltage, 1.6V forward voltage, and 12A output current. It operates up to 150 °C. Ideal for high-power applications requiring efficient rectification in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,936 parts In-Stock

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Digiode

USA . 2,427 parts In-Stock

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Anansix

USA . 1,936 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 5 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,390 parts In-Stock

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$0.052

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-

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$0.047

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1,390

$0.052

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$0.047

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MKK Technologies

India . 2,274 parts In-Stock

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$0.099

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2,274

$0.099

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DigiPath Technology Company

USA . 2,274 parts In-Stock

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$0.099

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2,274

$0.099

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Corphita

USA . 2,448 parts In-Stock

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Northwest PG Solutions

USA . 1,371 parts In-Stock

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Native Components

USA . 842 parts In-Stock

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Parana Technologies

USA . 19 parts In-Stock

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$0.063

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$0.063

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Overview

Discover the superior quality and reliability of the BYT61-1000R diode by STMicroelectronics, a trusted manufacturer in the industry. This rectifier diode offers exceptional performance with a maximum output current of 12A and a maximum repetitive peak reverse voltage of 1000V, making it ideal for a wide range of applications. Experience the value and benefits of this product, from its high efficiency to its durability, providing customers with the advantage they need for their projects. Choose STMicroelectronics for top-notch diodes that deliver results.

Feature Benefit Bullets

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this diode can withstand high temperature conditions, ensuring reliable performance in various applications.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, this product is specifically designed for converting alternating current (AC) to direct current (DC) efficiently, making it suitable for power supply applications.

Maximum Forward Voltage (VF): 1.6 V

The low maximum forward voltage of 1.6 volts results in minimal power loss and heat generation during operation, making this diode energy-efficient.

Maximum Output Current: 12 A

With a maximum output current of 12 amps, this diode can handle high current loads, making it suitable for applications that require power regulation and control.

Maximum Repetitive Peak Reverse Voltage: 1000 V

The high maximum repetitive peak reverse voltage of 1000 volts provides reliable protection against voltage spikes and reverse polarity, ensuring the longevity of the diode.

Maximum Non Repetitive Peak Forward Current: 150 A

With a high maximum non-repetitive peak forward current of 150 amps, this diode can handle short-duration high current pulses, making it suitable for surge protection applications.

Technical Specifications

Diodes & Rectifiers BYT61-1000R attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

1.6 V

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

12 A

Maximum Repetitive Peak Reverse Voltage:

1000 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Trade Compliance

BYT61-1000R Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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