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BYT231PIV-400

STMicroelectronics

BYT231PIV-400 by STMicroelectronics

STMicroelectronics BYT231PIV-400 is a fast recovery rectifier diode with 400V peak reverse voltage, 30A output current, and 0.1us reverse recovery time. It is designed for high temperature applications and features separate elements in a flange mount package for efficient performance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,801 parts In-Stock

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8,801

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Digiode

USA . 3,261 parts In-Stock

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3,261

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Anansix

USA . 2,050 parts In-Stock

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2,050

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Resion

USA . 1,097 parts In-Stock

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1,097

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ECAB

Sweden . 50 parts In-Stock

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50

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J2 Sourcing AB

Sweden . 30 parts In-Stock

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30

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Distributors (Availability)

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Native Components

USA . 915 parts In-Stock

1+ parts

$0.063

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-

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$0.061

915

$0.063

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$0.061

Northwest PG Solutions

USA . 571 parts In-Stock

1+ parts

$0.070

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$0.061

571

$0.070

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$0.061

IDEA Electronic Components Group

UK . 2,291 parts In-Stock

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$0.101

100+ parts

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$0.091

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2,291

$0.101

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$0.091

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MKK Technologies

India . 1,807 parts In-Stock

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$0.190

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1,807

$0.190

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DigiPath Technology Company

USA . 1,807 parts In-Stock

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$0.190

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1,807

$0.190

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AZTECH Wire

Italy . 606 parts In-Stock

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$10.230

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606

$10.230

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Corphita

USA . 3,987 parts In-Stock

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3,987

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Parana Technologies

USA . 1,824 parts In-Stock

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$0.121

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1,824

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$0.121

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Overview

Experience the superior quality and reliability of the STMicroelectronics BYT231PIV-400 diode rectifier. Manufactured by a trusted industry leader, this product is designed for fast recovery applications, offering customers efficient performance and peace of mind. With a maximum output current of 30A and a maximum repetitive peak reverse voltage of 400V, this diode delivers exceptional value and benefits for a wide range of electronic projects. Trust in STMicroelectronics to provide you with the cutting-edge technology you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the diode, making it suitable for various applications.

Maximum Reverse Recovery Time: 0.1 us

The fast reverse recovery time ensures efficient operation and performance of the diode.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and integration into different electronic devices.

Application: FAST RECOVERY

Designed for fast recovery applications, making it ideal for circuits that require quick response times.

Maximum Operating Temperature: 150 °C

With a high operating temperature, this diode can withstand elevated temperatures without compromising performance.

Maximum Forward Voltage (VF): 1.5 V

The low forward voltage helps minimize power dissipation and energy loss in the circuit.

Maximum Output Current: 30 A

Capable of handling high output currents, making it suitable for power electronics applications.

Maximum Repetitive Peak Reverse Voltage: 400 V

The high reverse voltage rating allows for reliable operation in reverse-biased conditions.

Maximum Non Repetitive Peak Forward Current: 350 A

Capable of handling high peak currents for short durations, ensuring robust performance in demanding situations.

Diode Element Material: SILICON

Silicon diodes offer good efficiency and performance characteristics, making them a popular choice for various electronic applications.

Technical Specifications

Diodes & Rectifiers BYT231PIV-400 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY

Case Connection:

ISOLATED

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

JESD-30 Code:

R-PUFM-X4

Maximum Non Repetitive Peak Forward Current:

350 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Recovery Time:

.1 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

Terminal Position:

Trade Compliance

BYT231PIV-400 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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