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BYT231PIV-1000

STMicroelectronics

BYT231PIV-1000 by STMicroelectronics

BYT231PIV-1000 by STMicroelectronics is a fast recovery rectifier diode with 1000V reverse test voltage and 30A output current. It has a max forward voltage of 1.9V and 0.165us reverse recovery time, making it ideal for high-power applications requiring quick switching capabilities. The diode's package style is flange mount with isolated case connection, suitable for various industrial and electronic systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,829 parts In-Stock

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Digiode

USA . 2,876 parts In-Stock

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Anansix

USA . 819 parts In-Stock

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819

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GES GmbH

Germany . 169 parts In-Stock

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169

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IDEA Electronic Components Group

UK . 1,447 parts In-Stock

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$0.081

100+ parts

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$0.073

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1,447

$0.081

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$0.073

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MKK Technologies

India . 135 parts In-Stock

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$0.152

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135

$0.152

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DigiPath Technology Company

USA . 135 parts In-Stock

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$0.152

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135

$0.152

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AZTECH Wire

Italy . 1,121 parts In-Stock

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$10.030

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1,121

$10.030

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Component Stockers USA

USA . 305 parts In-Stock

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$99.990

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305

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Corphita

USA . 4,766 parts In-Stock

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4,766

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Parana Technologies

USA . 1,614 parts In-Stock

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$0.097

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1,614

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$0.097

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Northwest PG Solutions

USA . 755 parts In-Stock

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755

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Native Components

USA . 650 parts In-Stock

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650

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Assy Fe

Spain . 25 parts In-Stock

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Overview

Unlock a world of possibilities with the STMicroelectronics BYT231PIV-1000 diode rectifier. Crafted with precision and expertise by industry leader STMicroelectronics, this product offers unparalleled quality and reliability. Ideal for fast recovery applications, this diode boasts a maximum reverse test voltage of 1000V and a maximum output current of 30A, ensuring optimal performance in any project. Trust in the BYT231PIV-1000 to deliver exceptional results, setting you apart from the competition and propelling your designs to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides good protection and insulation for the diodes, making them more durable and reliable.

Maximum Reverse Recovery Time: 0.165 us

The fast reverse recovery time of 0.165 us ensures quick switching speeds and efficient performance in high-speed applications.

Maximum Reverse Current: 100 uA

The low maximum reverse current of 100 uA indicates minimal leakage, ensuring efficient operation and lower power losses.

Reverse Test Voltage: 1000 V

The high reverse test voltage of 1000 V provides a wide margin of safety, making the diodes suitable for high-voltage applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows the diodes to be used in a wide range of environmental conditions without compromising performance.

Maximum Output Current: 30 A

The high maximum output current of 30 A allows the diodes to handle large loads, making them suitable for high-power applications.

Technical Specifications

Diodes & Rectifiers BYT231PIV-1000 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY

Case Connection:

ISOLATED

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.9 V

JESD-30 Code:

R-PUFM-X4

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1000 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.165 us

Reverse Test Voltage:

1000 V

Sub-Category:

Other Diodes

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

Terminal Position:

Trade Compliance

BYT231PIV-1000 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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