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BAT41CWFILM

STMicroelectronics

BAT41CWFILM by STMicroelectronics

BAT41CWFILM by STMicroelectronics is a Schottky rectifier diode with a max forward voltage of 0.45 V and supports up to 200 mA output current. It features a compact SO package, ideal for space-constrained applications. Operating temp reaches 150 °C, ensuring reliability in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,901 parts In-Stock

1+ parts

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3,901

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Anansix

USA . 2,653 parts In-Stock

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2,653

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Vyrian

USA . 2,043 parts In-Stock

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2,043

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North Shore Components

USA . 50 parts In-Stock

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,124 parts In-Stock

1+ parts

$0.027

100+ parts

-

1k+ parts

$0.024

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1,124

$0.027

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$0.024

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MKK Technologies

India . 1,558 parts In-Stock

1+ parts

$0.050

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1,558

$0.050

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DigiPath Technology Company

USA . 1,558 parts In-Stock

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$0.050

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1,558

$0.050

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Native Components

USA . 388 parts In-Stock

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$0.581

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388

$0.581

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Northwest PG Solutions

USA . 1,116 parts In-Stock

1+ parts

$0.639

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1,116

$0.639

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AZTECH Wire

Italy . 299 parts In-Stock

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$17.440

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299

$17.440

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Component Stockers USA

USA . 479 parts In-Stock

1+ parts

$99.990

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479

$99.990

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Corphita

USA . 3,995 parts In-Stock

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3,995

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Parana Technologies

USA . 1,837 parts In-Stock

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$0.032

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1,837

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$0.032

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Overview

Unlock superior performance with the BAT41CWFILM Schottky rectifier diode from STMicroelectronics. Renowned for its reliability and cutting-edge technology, this compact surface-mount component ensures efficient power management in your applications. With a robust design that handles high temperatures and delivers exceptional forward voltage characteristics, you can trust it to enhance product longevity and efficiency. Experience peace of mind and elevate your projects with ST's commitment to quality and innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and resistance to environmental factors, making it suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration allows for easier circuit integration and design flexibility in electronic applications.

Surface Mount: YES

Being surface mount compatible facilitates compact designs and eases the assembly process in modern electronic systems.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on PCBs, allowing for efficient circuit layouts.

No. of Terminals: 3

Three terminals provide the necessary connections for stable performance in various circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style enhances space-saving design and ease of integration in compact devices.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature ensures reliability and performance in demanding thermal environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers improved solderability and corrosion resistance, ensuring long-lasting connections.

Terminal Position: DUAL

The dual terminal position maximizes layout flexibility and optimizes connection options on the PCB.

Maximum Time At Peak Reflow Temperature: 30s

A 30-second peak reflow tolerance allows for effective soldering without damaging the diode, enhancing production efficiency.

Peak Reflow Temperature: 260 °C

Withstanding a peak reflow temperature of 260 °C ensures compatibility with modern surface mount soldering processes.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts alternating current (AC) to direct current (DC), vital for power supply applications.

Maximum Forward Voltage (VF): 0.45 V

A low maximum forward voltage drop ensures higher efficiency and lower heat generation in power-sensitive applications.

Maximum Output Current: 0.2 A

This output current rating makes it suitable for various low-power applications, ensuring versatility and effectiveness.

Technology: SCHOTTKY

Schottky technology allows for fast switching speeds and lower conduction losses, making this diode ideal for high-frequency applications.

Terminal Form: GULL WING

Gull wing terminals enhance solder joint reliability and provide a strong mechanical connection on the PCB.

No. of Elements: 2

Having two elements allows for parallel configurations, which can share current and improve reliability in applications.

Maximum Repetitive Peak Reverse Voltage: 100 V

The ability to withstand up to 100V of reverse voltage provides strong protection against voltage spikes and surges.

Maximum Non Repetitive Peak Forward Current: 1 A

Supporting a high non-repetitive peak forward current allows the diode to handle brief surge currents, crucial for transient load scenarios.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures good performance characteristics and reliability in various applications.

Technical Specifications

Diodes & Rectifiers BAT41CWFILM attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.45 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

1 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAT41CWFILM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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