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BAS70-07P6FILM

STMicroelectronics

BAS70-07P6FILM by STMicroelectronics

BAS70-07P6FILM by STMicroelectronics is a Schottky rectifier diode with a max reverse voltage of 70V and low forward voltage drop of 0.41V. It operates in extreme temps from -65 °C to 150 °C, making it ideal for compact electronic applications. Its surface mount design ensures efficient space utilization.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,033 parts In-Stock

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2,033

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Vyrian

USA . 1,984 parts In-Stock

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1,984

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Digiode

USA . 1,930 parts In-Stock

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1,930

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,050 parts In-Stock

1+ parts

$0.062

100+ parts

-

1k+ parts

$0.055

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2,050

$0.062

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$0.055

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MKK Technologies

India . 2,308 parts In-Stock

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$0.116

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2,308

$0.116

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DigiPath Technology Company

USA . 2,308 parts In-Stock

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$0.116

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2,308

$0.116

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Northwest PG Solutions

USA . 574 parts In-Stock

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$3.025

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574

$3.025

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AZTECH Wire

Italy . 359 parts In-Stock

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$9.770

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359

$9.770

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Component Stockers USA

USA . 793 parts In-Stock

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$99.990

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793

$99.990

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Corphita

USA . 3,425 parts In-Stock

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Perfect Parts

USA . 2,728 parts In-Stock

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2,728

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Parana Technologies

USA . 1,290 parts In-Stock

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$0.074

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1,290

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$0.074

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Native Components

USA . 980 parts In-Stock

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$2.668

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980

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$2.668

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Overview

Unlock the power of precision with the BAS70-07P6FILM from STMicroelectronics! This high-quality Schottky rectifier diode ensures superior performance in compact applications, providing exceptional efficiency and reliability. Whether you're designing power supplies or adapting to modern electronics, this versatile component excels in diverse environments, operating flawlessly from -65 °C to 150 °C. Elevate your projects with a trusted solution that guarantees longevity and minimal reverse leakage—choose BAS70-07P6FILM for unmatched value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy is advantageous for durability and protection against environmental factors, enhancing the product's lifespan.

Config: SEPARATE, 2 ELEMENTS

A separate configuration with two elements allows for flexibility in circuit design and improved performance in specific applications.

Surface Mount: YES

Surface mount capability facilitates easier integration into compact electronic devices, optimizing space and improving manufacturing efficiency.

Maximum Reverse Current: 10 uA

The low maximum reverse current indicates high efficiency, reducing power losses and improving overall circuit efficiency.

Package Shape: RECTANGULAR

The rectangular package shape is commonly used and allows for efficient space utilization on PCBs.

Reverse Test Voltage: 70 V

A reverse test voltage of 70V provides adequate protection for devices against voltage spikes, improving reliability.

No. of Terminals: 6

Having six terminals allows for versatile connections and enhances circuit design possibilities.

Package Style (Meter): SMALL OUTLINE

The small outline package style suits applications where space is at a premium, accommodating compact designs.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature of 150 °C ensures the diode can function in demanding environments without failure.

Minimum Operating Temperature: -65 °C

The capability to operate at a minimum temperature of -65 °C makes this diode suitable for extreme environments, ensuring reliability in various conditions.

Terminal Position: DUAL

Dual terminal positioning simplifies the layout and installation process in circuit applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is ideal for converting AC to DC, making it essential for power supply applications.

Maximum Forward Voltage (VF): 0.41 V

The low forward voltage drop of 0.41V ensures efficient performance by minimizing power loss in the circuit.

Maximum Output Current: 0.07 A

A maximum output current of 0.07A is suitable for various applications, ranging from low to moderate power requirements.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and reduced voltage drop, making this diode effective in high-speed applications.

Terminal Form: FLAT

Flat terminal form promotes better soldering and adhesion to the PCB, enhancing reliability and performance.

No. of Elements: 2

Having two elements in this diode configuration enhances its rectification capabilities and overall performance.

Maximum Repetitive Peak Reverse Voltage: 70 V

The ability to withstand a maximum repetitive peak reverse voltage of 70V increases the diode's reliability in demanding applications.

Diode Element Material: SILICON

Silicon as the diode element material provides excellent electrical properties, ensuring stable performance and reliability.

Technical Specifications

Diodes & Rectifiers BAS70-07P6FILM attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.41 V

JESD-30 Code:

R-PDSO-F6

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.07 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

70 V

Maximum Reverse Current:

10 uA

Reverse Test Voltage:

70 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

BAS70-07P6FILM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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