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BAS70-05W,115

NXP Semiconductors

BAS70-05W,115 by NXP Semiconductors

NXP Semiconductors' BAS70-05W,115 is a Schottky rectifier diode with 2 elements in common cathode config. It has a max reverse voltage of 70V and forward voltage of 0.41V, ideal for switching applications. With a small outline package style and peak reflow temp of 260C, it operates b/w -65 to 150 °C.

Median Price

$0.086

Lifecycle Status

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31

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1k+

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Adafruit Industries

USA . 20 parts In-Stock

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Arrow

USA . 14,900 parts In-Stock

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$0.074

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Mouser Electronics

USA . 1,177 parts In-Stock

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$0.270

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Newark

USA . 20 parts In-Stock

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Chip1Stop

Japan . 2,990 parts In-Stock

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Verical

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TTI

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EBV Elektronik

Germany . 15,000 parts In-Stock

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Avnet

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RS (Exports)

UK . 5,660 parts In-Stock

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Farnell

UK . 4,589 parts In-Stock

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Element14

Singapore . 3,889 parts In-Stock

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Future Electronics

Canada . 3,000 parts In-Stock

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DigiKey

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Rochester

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Digiode

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Nova Conductors

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Maritex

Poland . 65 parts In-Stock

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65

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$0.044

TME

Poland . 2,131 parts In-Stock

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IBS Electronics

USA . 2,025,000 parts In-Stock

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NAC Semi

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Chip Stock

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LIBRA Elektronik GmbH

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PC Components Company LLC

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Ampacity Inc.

Singapore . 35,758 parts In-Stock

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Semicontronic

India . 35,699 parts In-Stock

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Corphita

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Aztec Data Supply Inc.

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AZTECH Wire

Italy . 13,613 parts In-Stock

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Advanced Electronics

New Zealand . 20 parts In-Stock

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Argo Parts USA

USA . 4,175 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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Modulus Dynamics

Lithuania . 51 parts In-Stock

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Corohmni

South Africa . 170 parts In-Stock

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Perfect Parts

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Glotronic Ltd.

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iBuyXS LLC

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Eastek

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Continental Prestige Electronics

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Lixinc

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GreenTree Electronics

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Supply Digital

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UNI Independent Distributors

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Authorized Procurement Solutions

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Formix International (Excess)

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Robosynatics

Brazil . 350 parts In-Stock

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Lucentia Tech

USA . 350 parts In-Stock

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Overview

Discover the NXP Semiconductors BAS70-05W,115, a high-quality diode and rectifier perfect for various switching applications. With a common cathode configuration and two elements, this product offers superior performance and reliability. The BAS70-05W,115 is designed with advanced Schottky technology, providing a maximum reverse voltage of 70V and a low forward voltage of just 0.41V. Its small outline package makes it ideal for space-constrained designs, while its maximum operating temperature of 150°C ensures durability in challenging environments. Trust NXP Semiconductors for cutting-edge semiconductor solutions that deliver exceptional value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, ideal for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with 2 elements allows for efficient and reliable operation in circuit designs.

Surface Mount: YES

Being surface mountable makes it easy to integrate this diode into compact electronic devices or PCBs.

Maximum Reverse Current: 10 uA

With a low maximum reverse current, this diode ensures minimal power loss and improved efficiency in circuits.

Package Shape: RECTANGULAR

The rectangular package shape provides ease of handling and placement during assembly.

Reverse Test Voltage: 70 V

A high reverse test voltage of 70V ensures reliable performance and protection in reverse-bias conditions.

No. of Terminals: 3

The 3 terminals allow for versatile connectivity options in various circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and makes it suitable for compact electronic designs.

Application: SWITCHING

Designed specifically for switching applications, this diode delivers fast and efficient performance.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this diode can withstand harsh environmental conditions.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature of -65°C allows for reliable performance in cold environments.

Terminal Finish: TIN

The tin terminal finish provides good conductivity and solderability for easy integration into circuits.

Terminal Position: DUAL

The dual terminal position offers flexibility in installation and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

This diode can handle peak reflow temperatures for up to 30 seconds, ensuring proper soldering and reliability.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this diode can withstand high-temperature soldering processes.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting AC to DC current with high efficiency.

Maximum Forward Voltage (VF): 0.41 V

The low maximum forward voltage of 0.41V minimizes power loss and enhances energy efficiency.

Maximum Output Current: 0.07 A

With a maximum output current of 0.07A, this diode can handle moderate power loads.

Technology: SCHOTTKY

The Schottky technology used in this diode ensures fast switching speeds and low forward voltage drop.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical stability and ease of soldering during assembly.

No. of Elements: 2

With 2 diode elements, this product offers redundancy and improved performance in circuit protection.

Maximum Repetitive Peak Reverse Voltage: 70 V

The high maximum repetitive peak reverse voltage of 70V offers excellent protection against reverse polarity.

Maximum Non Repetitive Peak Forward Current: 0.1 A

With a maximum non-repetitive peak forward current of 0.1A, this diode can handle short-term high current spikes.

Diode Element Material: SILICON

The Silicon diode element material ensures reliable and consistent performance over a wide range of operating conditions.

Technical Specifications

Diodes & Rectifiers BAS70-05W,115 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Application:

SWITCHING

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.41 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

.1 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.07 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

70 V

Maximum Reverse Current:

10 uA

Reverse Test Voltage:

70 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAS70-05W,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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