Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 70 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;
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$22.580
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Freelance Electronics
$0.326
TME
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$0.384
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Digiode
$1.216
TEDSS.com
$1.900
$0.960
DF Sales Co.
$2.400
Forefront Electronics and Design
$4.900
Ace Electronics
$5.000
Component Electronics Inc.
$7.690
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NAC Semi
$23.140
Nova Conductors
$24.368
American Microsemiconductor Inc.
$33.190
Chip Stock
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Atlantic Semiconductor
Electronics Depot
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ComSIT Distribution GmbH
ComSIT USA
Schukat
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Holdelec - ElecDif-Pro
Amar Radio Corporation
Fibra_Brandt Electronic GMBH
Halfin
ACDS - Activité Composants Distribution Service
Legend Electronics Inc.
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ECAB
MISTER SPROCKETS
First Choice Components Inc.
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LWI Electronics Inc
LittleDiode
Odyssey Electronics LTD
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Manotoh
GES GmbH
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ABC Electronics Ltd.
Prism Electronics
Odi Ramu Company
Extreme Components
Resion
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Beltway Electronics Company
M&R Communications
Donberg Electronics Ltd
J & M Industries LLC
Century Electronics Ltd.
PAR Electronics
Huijzer Components
Sunrise Surplus Inc.
Inland Empire Components Inc.
Component Sense
NexGen Digital
ChromeModa Solutions
$0.755
$0.619
Component Stockers USA
$0.910
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$0.330
Aztec Data Supply Inc.
$0.927
Corphita
$1.152
Corohmni
$1.416
Advanced Electronics
$1.392
IDEA Electronic Components Group
$1.703
$1.533
Continental Prestige Electronics
$2.150
$1.190
$0.671
DigiPath Technology Company
$3.202
MKK Technologies
Netroflash
Microchip USA
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QUARKTWIN TECHNOLOGY LTD
Kulean Microsystems
Problanco Electronics
Marpe Global Electronics
Assy Fe
TANS Electronics
UNI Independent Distributors
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SupplyDigital Components
Parana Technologies
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Perfect Parts
XL Components Corporation
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Metaverse IC Inc.
QualityLine Systems
UHIMA Technologies
Cyclops Electronics Ltd (Excess)
RTC Component Inc.
Glotronic Ltd.
FE SAS
Infinite Electronics LLP (Excess)
Eliminating Global Boundries, Inc
Kepictronics
ChipstoGo Electronic ltd
Small Signal Bipolar Junction Transistors (BJT) 2N1711 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Semiconductor Technology
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
JEDEC-95 Code:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Element Material:
Nominal Transition Frequency (fT):
2N1711 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NSN
5961-00-407-4593, 5961004074593, 5961-01-042-9849, 5961010429849, 5961-00-852-5171, 5961008525171, 5961-00-022-5670, 5961000225670, 5961-00-069-6909, 5961000696909, 5961-00-943-7763, 5961009437763, 5961-01-039-8923, 5961010398923, 5961-15-109-7603, 5961151097603, 5961-01-052-6817, 5961010526817, 5961-15-055-5269, 5961150555269, 5961-15-063-2118, 5961150632118, 5961-99-118-4760, 5961991184760, 5961-99-630-8249, 5961996308249, 5961-12-157-6065, 5961121576065, 5961-15-089-4452, 5961150894452
NIIN
004074593, 010429849, 008525171, 000225670, 000696909, 009437763, 010398923, 151097603, 010526817, 150555269, 150632118, 991184760, 996308249, 121576065, 150894452
Since its initial founding in 1968, Semiconductor Technology, Inc. has assumed a leading role in high voltage N-Channel Mosfet and high voltage NPN/PNP Bipolar Transistor technology. We endeavor to offer our customers the most reliable mosfets and transistors in the industry. Transistors, being the building blocks of modern electronics, are found in just about any electrical product made to date. Our products serve a wide range of commercial, industrial, telecommunications, and military OEM's both in the domestic and international markets. Our quality assurance procedures and a zero-defects program have been in force for over 30 years. We can process our products to environmental and burn-in screening Class I, II, and III, which meet military environmental requirements; The product line encompasses the many NPN/PNP dual transistors (dual differential transistors) line. Approximately thirty-five percent of our high voltage N-Channel mosfets and high voltage NPN/PNP transistors are sole source items.
BAT54SLT1G
Onsemi
BAT54SLT1G by Onsemi is a fast recovery Schottky diode with 2 elements in series connected configuration. It has a max reverse recovery time of 0.005 us and a max forward voltage of 0.8 V. Ideal for applications requiring high-speed rectification, it operates b/w -55 to 150 °C and can handle a max output current of 0.2 A.
SN65HVD230DR
Texas Instruments
SN65HVD230DR by Texas Instruments is a BICMOS technology interface circuit with 1Mbps data rate, suitable for industrial applications. It operates at 3.3V, has 8 terminals in a small outline package, and can withstand temperatures from -40 to 85°C.
FDC5614P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 3 A;
2N7002
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
LL4148
Vishay Intertechnology
Vishay Intertechnology's LL4148 diode features a max reverse recovery time of 0.004 us, forward voltage of 1 V, and output current of 0.15 A. Ideal for rectification applications in electronics due to its high efficiency and low power dissipation capabilities.
LM7805CT
National Semiconductor
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
BSS138K-13
Diodes Incorporated
BSS138K-13 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, operating in enhancement mode. With 3 terminals and 0.31A max drain current, it offers high performance in small outline package style.
2N7002DWH6327XTSA1
Infineon Technologies
2N7002DWH6327XTSA1 by Infineon: N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3A ID, and 3ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals.
1N4148WT
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N7002,215
NXP Semiconductors
2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.
1N4148
Nte Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
MC33269T-3.3G
MC33269T-3.3G by Onsemi is a fixed positive single output LDO regulator with a max output current of 0.8 A and a dropout voltage of 1.35 V. It is commonly used in applications that require stable voltage regulation, such as power supplies for electronic devices.
SMBJ18CA
Db Lectro
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Sinyork
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
Toshiba
NDT2955
NDT2955 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 15A and EAS of 174mJ, suitable for ENHANCEMENT MODE operation. With a compact SMALL OUTLINE package and -55 to 150 °C operating range, it offers efficient power dissipation up to 3W.
2N2222A
Good-ark Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;
IRLML6401TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; Avalanche Energy Rating (EAS): 33 mJ;
BAV99-7-F
Multicomp Pro
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
MMBT2907AWT1G
Rochester Electronics
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Transistor Element Material: SILICON;
MMBT3904TT1G
MMBT3904TT1G by Onsemi is a NPN BJT transistor with 3 terminals, hFE of 30, and max. power dissipation of 0.15W. Ideal for amplifier applications, it has a max. collector-emitter voltage of 40V and operates up to 150°C. With a transition frequency of 300MHz, it offers fast turn-on/off times for efficient performance in small outline packages.
BC817-40W,135
BC817-40W,135 by NXP Semiconductors is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.7V and min hFE of 250. With a max IC of 0.5A and operating temperature of 150°C, it is ideal for small outline surface mount designs.
MMBT3906
Microchip Technology
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .01 A;
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
BC547B
Motorola
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Maximum Power Dissipation Ambient: 1.5 W;
2N2905A
PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; Terminal Position: BOTTOM; JEDEC-95 Code: TO-39;
PMBT2222A,215
The NXP Semiconductors PMBT2222A,215 is a NPN BJT transistor for switching applications. It has a max VCEsat of 1V, min hFE of 40, and max IC of 0.6A. With a package style of small outline and peak reflow temp of 260C, it operates b/w -65 to 150 °C for various electronic circuits.
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC857B,215
Nexperia
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel;
BC817K40E6327HTSA1
BC817K40E6327HTSA1 by Infineon is a NPN BJT transistor with hFE of 250, VCE of 45V, and IC of 0.5A. Ideal for amplifier applications due to its high transition frequency of 170MHz. Features Gull Wing terminals in a small outline package.
SMBT2222AE6327HTSA1
SMBT2222AE6327HTSA1 by Infineon is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly. Operating up to 150°C, it offers fast turn-on/off times of 35ns/285ns.
BC847C
General Semiconductor
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC817-40
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Package Style (Meter): SMALL OUTLINE;
SBC847CDW1T1G
SBC847CDW1T1G by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.38W, hFE of 420, and Vce of 45V. With a package style of small outline and surface mount capability, it operates b/w -55 to 150°C.
BC846B
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
BC847B
Kodenshi Auk
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
Crimson Semiconductor
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
MMBT2907A
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Position: DUAL;
Weitronic Enterprise
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
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2N1711
Semitronics
General Transistor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 70 MHz; Maximum Collector Current (IC): .5 A; Maximum Power Dissipation Ambient: 3 W;
Central Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 70 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .5 A;
Rca Solid State
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 120 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;
New England Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Terminal Form: WIRE; JEDEC-95 Code: TO-39;
Tt Electronics Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 70 MHz; Maximum Collector Current (IC): .5 A; Package Body Material: METAL;
Micro Electronics
Vpt Components
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .5 A; Maximum VCEsat: 1.5 V;
Solid State Devices
Zetex Plc
General Diode
Baneasa S A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 70 MHz; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 100;
New Jersey Semiconductor Products
NPN; Configuration: SINGLE; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 30 V; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb);
Space Power Electronics
Siemens
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .5 A; JESD-30 Code: O-MBCY-W3; Transistor Element Material: SILICON;
2N1716
International Devices
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 16 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .75 A;
Semiconductor Technology
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