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2N3019S

Semicoa

2N3019S by Semicoa

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): 1 A;

Median Price

$20.470

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

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Microchip Technology

USA . 700 parts In-Stock

1+ parts

$20.470

100+ parts

$19.010

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$17.250

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700

$20.470

$19.010

$17.250

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DigiKey

USA . 138 parts In-Stock

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$20.470

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$19.010

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138

$20.470

$19.010

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Mouser Electronics

USA . 100 parts In-Stock

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$20.470

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$19.010

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100

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Arrow

USA . 50 parts In-Stock

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$17.880

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50

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$17.880

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Vyrian

USA . 6,466 parts In-Stock

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Chip Stock

USA . 225 parts In-Stock

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225

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LWI Electronics Inc

India . 130 parts In-Stock

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130

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Inland Empire Components Inc.

USA . 84 parts In-Stock

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Extreme Components

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Resion

USA . 8 parts In-Stock

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Electronic Expediters

USA . 2 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 1 parts In-Stock

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Ampacity Inc.

Singapore . 71 parts In-Stock

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$15.150

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Microchip USA

USA . 7,370 parts In-Stock

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7,370

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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2,780

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RGB Technical Solutions

Ukraine . 1,305 parts In-Stock

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RTC Component Inc.

USA . 204 parts In-Stock

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N3019S attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Semicoa

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-39

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

5 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N3019S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-187-8067, 5961011878067

NIIN

011878067

Manufacturer Highlights

Semicoa

Trusted Everywhere for Mission Success is our commitment statement to our customers. This means the Semicoa Team operates as one to ensure the product exceeds expectation. SEMICOA is a leader in the design and development of bipolar power devices for high-reliability military, defense, aerospace, and space applications. Quality and high reliability are cornerstones upon which space, military, and aerospace applications are built. In many instances, there is absolutely no room for error. These critical industries require a partner that they can trust to deliver time after time. For 50 years, SEMICOA has been Trusted Everywhere. Semicoa specializes in the manufacture of discrete silicon semiconductors focusing on small signal transistors for space, military, and aerospace industries globally. The design, development and wafer fabrication operations are located in Southern California. The company achieved the highest U.S. government qualification (JANS, MIL-PRF-19500, Space Level) for the production of electronic components and it is AS9100:2009D certified. Semicoa is ITAR registered. Semicoa is also an active member of the JEDEC Community. Its leading edge manufacturing facility performs discrete and hybrid assembly utilizing innovative techniques and processes. High volume production is performed on dedicated assembly lines to reduce cost and increase throughput. Semicoa constantly expands product, equipment and production capabilities to meet the growing demand of its customers for high reliability and Rad Hard products.

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