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2SD1760-P-C

Secos

2SD1760-P-C by Secos

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 90 MHz; Maximum Collector Current (IC): 3 A; Minimum DC Current Gain (hFE): 82;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SD1760-P-C attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Secos

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

82

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD1760-P-C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Secos

SeCoS Halbleitertechnologie GmbH in Germany is devoted to bring the best quality of wafer products to the market. In 2001, with over 50 years of experience in wafer production, SeCoS Halbleitertechnologie GmbH supplied techniques and assigned patents to SeCoS Taiwan, authorizing SeCoS Taiwan to produce and market semiconductors to the world. Here at SeCoS, our aim is to create mutually beneficial business partnerships as well as seek solid, long-term relationships with customers. With high standard customer service, our main objective is to provide our best quality at a very competitive price. It is our honour to introduce the brand and the quality of SeCoS Corporation to our customers. We believe our spirit in precision and passion for innovation will bring a revolutionary experience to the global market.

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