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ULN2004L

Sanken Electric

ULN2004L by Sanken Electric

NPN; Configuration: 7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON; Transistor Application: SWITCHING;

Median Price

$0.980

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

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Forefront Electronics and Design

USA . 25 parts In-Stock

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$0.980

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Vyrian

USA . 17,589 parts In-Stock

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Inventory MP

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Bristol Electronics

USA . 5,041 parts In-Stock

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ECAB

Sweden . 723 parts In-Stock

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Sogenti Electronics

Canada . 112 parts In-Stock

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Cyclops Electronics Ltd

UK . 75 parts In-Stock

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LittleDiode

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PC Components Company LLC

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Fibra_Brandt Electronic GMBH

Germany . 20 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 1,168 parts In-Stock

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ULN2004L attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Sanken Electric

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

JESD-30 Code:

R-PDSO-G16

No. of Elements:

7

No. of Terminals:

16

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ULN2004L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Sanken Electric

In 1937, as part of the 50th anniversary project of the former Toho Electric Power Co., Ltd., the Toho Industrial Research Institute was invited by the late Yasuzaemon Matsunaga, president of the company at the time, to develop industries that would actually benefit society. It was created with the intention of doing In 1946, the late Tetsuji Kotani, chief of the semiconductor research laboratory at the same research institute, established Toho Sanken Denki Co., Ltd., taking over the engineers and equipment of the research institute, which was dissolved after the end of the war. In 1962, the company name was changed to the current name, Sanken Electric Co., Ltd. Founded a factory specializing in semiconductors with the results of cuprous oxide and selenium rectifiers that have continued since the laboratory days. In 1958, we succeeded in making prototypes of thermal diffusion silicon diodes, which were groundbreaking in the world at the time, followed by silicon power transistors. Since then, we have grown together with the electronics industry, established a solid position as a manufacturer in the power electronics field, and grasped the changes of the times. We have provided solutions. We have been and will continue to supply unique and advanced products and strive to be a prominent innovator in the field of power electronics.

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