Loading...

R6007RND3TL1

ROHM

R6007RND3TL1 by ROHM

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 96 W; Package Shape: RECTANGULAR; Terminal Position: SINGLE;

Median Price

$1.020

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 180 parts In-Stock

1+ parts

$1.020

100+ parts

-

1k+ parts

-

10k+ parts

-

180

$1.020

-

-

-

DigiKey

USA . 3,017 parts In-Stock

1+ parts

$1.460

100+ parts

$0.857

1k+ parts

$0.748

10k+ parts

$0.334

3,017

$1.460

$0.857

$0.748

$0.334

Chip1Stop

Japan . 208 parts In-Stock

1+ parts

$1.810

100+ parts

$0.655

1k+ parts

$0.543

10k+ parts

-

208

$1.810

$0.655

$0.543

-

Mouser Electronics

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.628

5,000

-

-

-

$0.628

Element14

Singapore . 190 parts In-Stock

1+ parts

-

100+ parts

$1.118

1k+ parts

$0.814

10k+ parts

$0.807

190

-

$1.118

$0.814

$0.807

Farnell

UK . 190 parts In-Stock

1+ parts

-

100+ parts

$0.853

1k+ parts

$0.706

10k+ parts

$0.702

190

-

$0.853

$0.706

$0.702

Verical

USA . 158 parts In-Stock

1+ parts

-

100+ parts

$1.020

1k+ parts

-

10k+ parts

-

158

-

$1.020

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ACDS - Activité Composants Distribution Service

France . 90 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

90

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

CoreStaff

Japan . 80 parts In-Stock

1+ parts

$1.473

100+ parts

$0.604

1k+ parts

$0.557

10k+ parts

-

80

$1.473

$0.604

$0.557

-

Microchip USA

USA . 7,131 parts In-Stock

1+ parts

$5.021

100+ parts

-

1k+ parts

-

10k+ parts

-

7,131

$5.021

-

-

-

Technical Specifications

Power Field Effect Transistors (FET) R6007RND3TL1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Avalanche Energy Rating (EAS):

132 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (ID):

7 A

Maximum Drain-Source On Resistance:

.94 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

21 A

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

R6007RND3TL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.