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2SC5824T100Q

ROHM

2SC5824T100Q by ROHM

ROHM 2SC5824T100Q is a NPN BJT transistor with max. collector-emitter voltage of 60V and max. collector current of 3A. It has a min. DC current gain of 120, suitable for switching applications at up to 150°C operating temperature in surface mount designs.

Median Price

$0.622

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Mouser Electronics

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$0.940

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$0.381

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$0.264

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$0.192

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DigiKey

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$1.000

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$0.404

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$0.280

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$0.210

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Verical

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Chip1Stop

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ACDS - Activité Composants Distribution Service

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Cyclops Electronics Ltd

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Bristol Electronics

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Component Stockers USA

USA . 100,087 parts In-Stock

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$0.230

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$0.150

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$0.140

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$0.130

100,087

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CoreStaff

Japan . 1,000 parts In-Stock

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$0.433

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$0.219

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$0.166

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Perfect Parts

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Epart123

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Overview

Discover the unparalleled performance of the 2SC5824T100Q by ROHM, a top-of-the-line Small Signal Bipolar Junction Transistor. With a maximum collector current of 3A and minimum DC current gain of 120, this NPN transistor is perfect for switching applications. The package body material of plastic/epoxy ensures durability, while the small outline design makes it easy to integrate into any project. Trust in ROHM's reputation for quality and innovation to deliver a product that exceeds expectations. Experience the power and precision of the 2SC5824T100Q for yourself and unlock new possibilities for your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, ensuring long-term reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile for various circuit designs.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides efficient and reliable performance in various electronic circuits.

Surface Mount: YES

Being surface mountable allows for easy and convenient integration onto PCBs, saving space and simplifying the assembly process.

Maximum Power Dissipation (Abs): 2 W

With a high power dissipation rating, this transistor can handle larger loads and operate at high power levels without overheating.

Minimum DC Current Gain (hFE): 120

A high minimum DC current gain ensures consistent and reliable amplification in various circuit applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to function reliably in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 60 V

The high collector-emitter voltage rating allows this transistor to handle higher voltage levels, increasing the range of compatible circuits.

Transistor Element Material: SILICON

Silicon-based transistors offer better performance and reliability compared to other materials, making this transistor a durable choice.

Maximum Collector Current (IC): 3 A

The high collector current rating enables this transistor to handle larger electrical loads, making it suitable for high-power applications.

Terminal Finish: Tin/Copper (Sn/Cu)

The tin/copper terminal finish provides excellent conductivity and corrosion resistance, ensuring reliable connections and a long lifespan.

Nominal Transition Frequency (fT): 200 MHz

With a high nominal transition frequency, this transistor is ideal for high-frequency signal processing and switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC5824T100Q attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Copper (Sn/Cu)

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC5824T100Q Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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