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2SK1170

Renesas Technology

2SK1170 by Renesas Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 20 A; Terminal Form: THROUGH-HOLE; Minimum DS Breakdown Voltage: 500 V;

Median Price

$7.840

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

< 1k

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Forefront Electronics and Design

USA . 25 parts In-Stock

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$7.840

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ComSIT Distribution GmbH

Germany . 80 parts In-Stock

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Huijzer Components

Netherlands . 55 parts In-Stock

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Holdelec - ElecDif-Pro

France . 46 parts In-Stock

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Pegasus Components GmbH

Germany . 15 parts In-Stock

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ECAB

Sweden . 10 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 2 parts In-Stock

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LittleDiode

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Distributors (Availability)

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Northwest PG Solutions

USA . 374 parts In-Stock

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$2.640

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Assy Fe

Spain . 2,744 parts In-Stock

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Native Components

USA . 339 parts In-Stock

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$2.328

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Technical Specifications

Power Field Effect Transistors (FET) 2SK1170 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Renesas Technology

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (ID):

20 A

Maximum Drain-Source On Resistance:

.27 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

80 A

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2SK1170 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Technology

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