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2SA673ARR

Renesas Technology

2SA673ARR by Renesas Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Terminal Form: WIRE; Maximum Collector-Emitter Voltage: 50 V;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 352 parts In-Stock

1+ parts

$0.205

100+ parts

-

1k+ parts

-

10k+ parts

$0.196

352

$0.205

-

-

$0.196

Northwest PG Solutions

USA . 2,136 parts In-Stock

1+ parts

$0.225

100+ parts

-

1k+ parts

-

10k+ parts

$0.199

2,136

$0.225

-

-

$0.199

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA673ARR attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Technology

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SA673ARR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Technology

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