Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
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Power Field Effect Transistors (FET) UPA622TT attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Renesas Electronics
Configuration:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Field Effect Transistor Technology:
JESD-609 Code:
No. of Elements:
Operating Mode:
Maximum Operating Temperature:
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Sub-Category:
Surface Mount:
Terminal Finish:
UPA622TT Transistors trade compliance attributes, and parameters.
ECCN
5A002
ECCN Governance
EAR
M24308/2-1F
Cristek Interconnects
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; No. of Rows Loaded: 2; Shell Size: 1/E; Filter Feature: NO;
1N4148
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Multicomp Pro
ULN2803ADWG4
Texas Instruments
ULN2803ADWG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates at temperatures ranging from -40 to 85°C and has a max supply voltage of 3V. Ideal for applications requiring sink current flow direction in a small outline package style.
ULN2803ADWR
ULN2803ADWR by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates b/w -40 to 85°C, has a max supply voltage of 3V, and is ideal for buffer or inverter-based applications requiring sink current flow direction.
SMBJ18CA
Jgd Semiconductors
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Polarity: BIDIRECTIONAL; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V;
2N2222A
Crimson Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Frontier Electronics
Bytesonic Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN2803A
YOUTAI SEMICONDUCTOR CO LTD
BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Terminal Form: GULL WING; No. of Terminals: 18; Package Code: SOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G18;
LM317T/NOPB
LM317T/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max input-output voltage differential of 40V. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. The package style is flange mount with three terminals for easy installation.
EU2B-YS3103F
Idec
ROTARY SWITCH;
BAV99
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Leshan Radio
RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Forward Voltage (VF): .5 V;
MS3V-T1R32.768KHZ+/-20PPM12.5PF
Golledge Electronics
MS3V-T1R32.768KHZ+/-20PPM12.5PF by Golledge Electronics is a crystal oscillator with 20 ppm frequency tolerance, 126% stability, and 12.5 pF load capacitance. It is ideal for applications requiring precise timing in temperature-sensitive environments due to its -40 to 85 °C operating range.
CC0603KRX7R9BB103
Yageo
Yageo CC0603KRX7R9BB103 is a 0603 SMT ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.
1N4148WSF-7
Diodes Incorporated
1N4148WSF-7 by Diodes Inc. is a single silicon rectifier diode with max output current of 0.25A and max reverse voltage of 100V. It operates b/w -55 to 150°C, has a small outline package style, and is suitable for surface mount applications in various electronic circuits.
MC33269T-3.3G
Onsemi
MC33269T-3.3G by Onsemi is a fixed positive single output LDO regulator with a max output current of 0.8 A and a dropout voltage of 1.35 V. It is commonly used in applications that require stable voltage regulation, such as power supplies for electronic devices.
LM358N
Silicon Group
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
BSS138
Vishay Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;
IRFR9024PBF
Vishay Intertechnology
Vishay Intertechnology's IRFR9024PBF is a P-CHANNEL FET with 60V DS Breakdown Voltage and 8.8A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.28 ohm On Resistance. Suitable for high-power circuits, it has a max power dissipation of 42W and can withstand temperatures from -55 to 150°C.
SQJ402EP-T1_GE3
Vishay Intertechnology's SQJ402EP-T1_GE3 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 32A ID. Ideal for applications requiring high current handling, such as power supplies or motor control systems. Features include 48mJ EAS rating, -55 to 175 °C operating temp range, and 0.011 ohm Drain-Source On Resistance.
PSMN4R8-100BSE
NXP Semiconductors
PSMN4R8-100BSE by NXP is an N-channel Power FET with 100V DS breakdown voltage and 120A max drain current. Ideal for switching applications, it features a built-in diode, 0.0048 ohm RDS(on), and 707A pulsed drain current.
SIS413DN-T1-GE3
Vishay Intertechnology's SIS413DN-T1-GE3 is a P-channel FET with 30V DS breakdown voltage, ideal for switching applications. Features include 70A max pulsed drain current, 0.0094 ohm max RDS(on), and 20mJ avalanche energy rating. Suitable for enhancement mode operation in small outline packages with drain case connection.
Vishay Siliconix
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; JESD-30 Code: R-PSSO-G2; Minimum DS Breakdown Voltage: 60 V;
NVF2955T1G
The Onsemi NVF2955T1G is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 17A and EAS of 225mJ, operating in ENHANCEMENT MODE. With a compact SMALL OUTLINE package and 0.185 ohm RDS(on), it offers efficient power dissipation up to 2.3W at 175°C.
SQ2362ES-T1_GE3
Vishay Intertechnology's SQ2362ES-T1_GE3 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 17A IDM. Ideal for applications requiring high drain current handling, such as automotive power management systems. Features include EAS of 7mJ, -55 to 175 °C operating temp range, and AEC-Q101 compliance.
SI7113ADN-T1-GE3
SI7113ADN-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 20A IDM, 11.25mJ EAS, and 0.132 ohm Drain-Source On Resistance. Operating from -55 to 150 °C, it has a DUAL Terminal Position and DRAIN Case Connection.
FDMC86102LZ
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 41 W; No. of Terminals: 5; Peak Reflow Temperature (C): 260;
FDS8984_F085
FDS8984_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 2 ELEMENTS WITH BUILT-IN DIODE, 30A Max Pulsed Drain Current, and 0.023 ohm Max Drain-Source On Resistance. Suitable for surface mount with GULL WING terminals in a SMALL OUTLINE package style.
2N7000
Unisonic Technologies
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
IRFB4227PBF
Infineon Technologies
IRFB4227PBF by Infineon is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 260A IDM and 0.024 ohm RDS(on), operating in ENHANCEMENT MODE. With a max power dissipation of 330W, it is suitable for high-power electronic systems.
BBS3002-DL-1E
BBS3002-DL-1E by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, 400A IDM, and 0.009 ohm RDS(on). Ideal for power management applications due to its high drain current capacity and low on-resistance. Suitable for surface mount designs in various electronic systems requiring efficient power control.
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 330 W; Case Connection: DRAIN; Transistor Element Material: SILICON;
FQD2N100TM
FQD2N100TM by Onsemi is a N-CHANNEL Power FET with 1000V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 6.4A and EAS of 160mJ, operating in ENHANCEMENT MODE. With a compact RECTANGULAR package style and GULL WING terminals, it offers reliable performance up to 150°C.
FQP30N06L
FQP30N06L by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 128A IDM Pulsed Drain Current, 350mJ EAS Avalanche Energy Rating, and 0.045 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE and has a max power dissipation of 79W at 175°C.
IPZ40N04S5L4R8ATMA1
Infineon's IPZ40N04S5L4R8ATMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 160A IDM, and 0.0067 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
FDN5618P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
BSC011N03LSATMA1
Infineon BSC011N03LSATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 400A IDM, 0.0014 ohm RDS(on), and 190mJ EAS rating. Its METAL-OXIDE SEMICONDUCTOR technology and DUAL terminal position make it suitable for high-power circuits.
IRF740SPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Pulsed Drain Current (IDM): 40 A; Minimum DS Breakdown Voltage: 400 V;
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UPA672T-T2-AT
Renesas Electronics
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): .1 A;
UPA622TT-AT
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Maximum Drain Current (Abs) (ID): 3 A; Operating Mode: ENHANCEMENT MODE;
UPA620TT-AT
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
UPA672T-T1-AT
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): .1 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
UPA622TT-E2-AT
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Maximum Drain Current (Abs) (ID): 3 A; Maximum Operating Temperature: 150 Cel;
UPA675T-AT
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (Abs) (ID): .1 A; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
UPA611TA-T1-AT
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .1 A; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
UPA622TT-E1-AT
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Maximum Drain Current (ID): 3 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
UPA620TT-E1-AT
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
UPA672T-T1-A
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (Abs) (ID): .1 A; Maximum Drain Current (ID): .1 A; Operating Mode: ENHANCEMENT MODE;
UPA672T
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE; JESD-609 Code: e0;
UPA620TT-E2-AT
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 5 A;
UPA672T-T2-A
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): .1 A; Maximum Drain Current (ID): .1 A;
UPA611TA-T2-AT
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): .1 A; Maximum Operating Temperature: 150 Cel;
UPA622TT-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Peak Reflow Temperature (C): 260; Terminal Finish: TIN BISMUTH;
UPA611TA-AT
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
UPA611TA-T2-A
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): .1 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
UPA620TT-E2-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Drain Current (ID): 5 A; Operating Mode: ENHANCEMENT MODE;
UPA672T-AT
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): .1 A; Maximum Drain Current (Abs) (ID): .1 A;
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