Loading...

NX8330RA-BA

Renesas Electronics

NX8330RA-BA by Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Semiconductor Material: AlGaInP; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 1.4 V;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Laser Diodes NX8330RA-BA attributes and parameters. Explore more Laser Diodes devices from Renesas Electronics

Specs

Maximum Forward Current:

.15 A

Maximum Forward Voltage:

1.4 V

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Optoelectronic Type:

Peak Wavelength (nm):

1310

Semiconductor Material:

AlGaInP

Sub-Category:

Laser Diodes

Manufacturer Highlights

Renesas Electronics

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19