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NP32N055HLE-AZ

Renesas Electronics

NP32N055HLE-AZ by Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 66 W; No. of Elements: 1; Terminal Position: SINGLE;

Median Price

$1.060

Lifecycle Status

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5

In-Stock Inventory

1k+

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Adafruit Industries

USA . 900 parts In-Stock

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$2.041

100+ parts

$1.857

1k+ parts

$1.674

10k+ parts

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900

$2.041

$1.857

$1.674

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Rochester

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$1.040

1k+ parts

$0.864

10k+ parts

$0.770

1,000

-

$1.040

$0.864

$0.770

DigiKey

USA . 1,000 parts In-Stock

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$1.080

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1,000

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$1.080

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Verical

USA . 1,000 parts In-Stock

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$0.907

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1,000

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$0.907

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DigiKey Marketplace

USA . 1,000 parts In-Stock

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Component Stockers USA

USA . 890 parts In-Stock

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$0.870

100+ parts

$0.820

1k+ parts

$0.740

10k+ parts

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890

$0.870

$0.820

$0.740

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Advanced Electronics

New Zealand . 900 parts In-Stock

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$2.041

100+ parts

$1.857

1k+ parts

$1.674

10k+ parts

-

900

$2.041

$1.857

$1.674

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Microchip USA

USA . 268 parts In-Stock

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$5.330

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268

$5.330

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QUARKTWIN TECHNOLOGY LTD

USA . 14,539 parts In-Stock

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14,539

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Kepictronics

USA . 3,000 parts In-Stock

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Metaverse IC Inc.

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2,500

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Technical Specifications

Power Field Effect Transistors (FET) NP32N055HLE-AZ attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Avalanche Energy Rating (EAS):

64 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

55 V

Maximum Drain Current (Abs) (ID):

32 A

Maximum Drain Current (ID):

32 A

Maximum Drain-Source On Resistance:

.033 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

100 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NP32N055HLE-AZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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