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FN4L3M-T1B-A

Renesas Electronics

FN4L3M-T1B-A by Renesas Electronics

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Transistor Element Material: SILICON;

Median Price

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Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 904 parts In-Stock

1+ parts

$7.890

100+ parts

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1k+ parts

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10k+ parts

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904

$7.890

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Northwest PG Solutions

USA . 601 parts In-Stock

1+ parts

$8.679

100+ parts

$7.811

1k+ parts

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10k+ parts

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601

$8.679

$7.811

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) FN4L3M-T1B-A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

20

JESD-609 Code:

e6

No. of Elements:

1

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Transistor Element Material:

SILICON

Trade Compliance

FN4L3M-T1B-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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