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FN4L3M-T1B

Renesas Electronics

FN4L3M-T1B by Renesas Electronics

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 20; No. of Elements: 1;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 578 parts In-Stock

1+ parts

$13.275

100+ parts

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1k+ parts

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578

$13.275

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Northwest PG Solutions

USA . 2,307 parts In-Stock

1+ parts

$14.602

100+ parts

$13.142

1k+ parts

-

10k+ parts

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2,307

$14.602

$13.142

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Assy Fe

Spain . 24,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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24,000

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) FN4L3M-T1B attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

20

No. of Elements:

1

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Transistor Element Material:

SILICON

Trade Compliance

FN4L3M-T1B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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