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TGF2025

Qorvo

TGF2025 by Qorvo

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 260; No. of Elements: 1;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

RF Small Signal Field Effect Transistors (FET) TGF2025 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Qorvo

Specs

Additional Features:

HIGH RELIABILITY

Configuration:

Minimum DS Breakdown Voltage:

8 V

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Highest Frequency Band:

K BAND

JESD-30 Code:

R-XUUC-N

No. of Elements:

1

Operating Mode:

DEPLETION MODE

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

TGF2025 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Qorvo

Your car. Your smartphone. Your wrist. Your heart. Even outer space. Qorvo products are at work connecting, protecting and powering the planet. We bring core radio frequency (RF) and power technologies and solutions to mobile, infrastructure, the IoT, defense/aerospace and power management markets. Transforming the way you live, work, play and communicate — that's what inspires us. Innovation. Product Leadership. Scale. Speed. At Qorvo, we are driven by the possibility of discovery — of new RF and power technologies and advancements in design, manufacturing and communications that make the world a better, cleaner and more connected place. We've been working on that for more than 30 years, both as innovators and as stewards of our planet. And we are just getting started.

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