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PHD108NQ03LT

Philips Semiconductors

PHD108NQ03LT by Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 180 W; Peak Reflow Temperature (C): 260; No. of Elements: 1;

Median Price

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Vyrian

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ACDS - Activité Composants Distribution Service

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Digiode

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Anansix

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AZTECH Wire

Italy . 2,474 parts In-Stock

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One Stop Electronics

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Metaverse IC Inc.

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Perfect Parts

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Kepictronics

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A-Z Elektronik GmbH

Germany . 6,248 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 3,446 parts In-Stock

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Corphita

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UNI Independent Distributors

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Glotronic Ltd.

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Supply Digital

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Authorized Procurement Solutions

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GreenTree Electronics

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Technical Specifications

Power Field Effect Transistors (FET) PHD108NQ03LT attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Philips Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

75 A

Maximum Drain Current (ID):

75 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Trade Compliance

PHD108NQ03LT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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