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PDTA114YK

Philips Semiconductors

PDTA114YK by Philips Semiconductors

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;

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Digiode

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Vyrian

USA . 2,456 parts In-Stock

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Anansix

USA . 916 parts In-Stock

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One Stop Electronics

USA . 350 parts In-Stock

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$44.050

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UNI Independent Distributors

Spain . 1,761 parts In-Stock

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Corphita

USA . 1,402 parts In-Stock

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Perfect Parts

USA . 129 parts In-Stock

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTA114YK attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Philips Semiconductors

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

100

JESD-609 Code:

e3

No. of Elements:

1

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Transistor Element Material:

SILICON

Trade Compliance

PDTA114YK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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