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BGE887

Philips Semiconductors

BGE887 by Philips Semiconductors

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Minimum Operating Temperature: -20 Cel; Power Supplies (V): 24; Maximum Supply Current: 280 mA;

Median Price

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Lifecycle Status

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6

In-Stock Inventory

1k+

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Anansix

USA . 853 parts In-Stock

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Digiode

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Vyrian

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Resion

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Electronics Depot

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Q Components

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Distributors (Availability)

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One Stop Electronics

USA . 367 parts In-Stock

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$7.000

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UNI Independent Distributors

Spain . 4,900 parts In-Stock

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Corphita

USA . 1,221 parts In-Stock

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Northwest PG Solutions

USA . 875 parts In-Stock

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Native Components

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Technical Specifications

RF & Microwave Amplifiers BGE887 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Philips Semiconductors

Specs

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

Package Equivalence Code:

SOT-115H

Power Supplies (V):

24

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

280 mA

Technology:

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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