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BF909WR

Philips Semiconductors

BF909WR by Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Anansix

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Digiode

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Vyrian

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One Stop Electronics

USA . 1,122 parts In-Stock

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GreenTree Electronics

Israel . 30,000 parts In-Stock

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Authorized Procurement Solutions

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Assy Fe

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UNI Independent Distributors

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Corphita

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Kepictronics

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Alle Elektronik GmbH

Germany . 1,824 parts In-Stock

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Perfect Parts

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Northwest PG Solutions

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Technical Specifications

Power Field Effect Transistors (FET) BF909WR attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Philips Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.04 A

Maximum Drain Current (ID):

.04 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Trade Compliance

BF909WR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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