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BF1107W

Philips Semiconductors

BF1107W by Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Maximum Drain Current (ID): .01 A; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: Tin/Lead (Sn/Pb);

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 2,242 parts In-Stock

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Anansix

USA . 1,274 parts In-Stock

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Digiode

USA . 545 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 790 parts In-Stock

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$0.078

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$0.075

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Northwest PG Solutions

USA . 1,009 parts In-Stock

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$0.086

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$0.076

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One Stop Electronics

USA . 624 parts In-Stock

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$27.050

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GreenTree Electronics

Israel . 41,943 parts In-Stock

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UNI Independent Distributors

Spain . 7,628 parts In-Stock

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Corphita

USA . 1,890 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) BF1107W attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Philips Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.01 A

Maximum Drain Current (ID):

.01 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e0

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Sub-Category:

FET General Purpose Power

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

BF1107W Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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