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SZMMSZ2V4T3G

Onsemi

SZMMSZ2V4T3G by Onsemi

SZMMSZ2V4T3G by Onsemi is a Zener diode with a nominal reference voltage of 2.4V and max voltage tolerance of 5%. It operates in temperatures ranging from -55 to 150 °C and has a max power dissipation of 0.5W. Ideal for applications requiring precise voltage regulation in automotive electronics due to AEC-Q101 compliance.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 60,000 parts In-Stock

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Vyrian

USA . 12,073 parts In-Stock

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Digiode

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Ampacity Inc.

Singapore . 669 parts In-Stock

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$3.010

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AZTECH Wire

Italy . 152 parts In-Stock

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$9.820

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Component Stockers USA

USA . 608 parts In-Stock

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$99.990

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TANS Electronics

Latvia . 5,651 parts In-Stock

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SupplyDigital Components

Austria . 5,473 parts In-Stock

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Corphita

USA . 1,762 parts In-Stock

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Kulean Microsystems

USA . 1,180 parts In-Stock

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Problanco Electronics

Mexico . 660 parts In-Stock

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Corohmni

South Africa . 427 parts In-Stock

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UHIMA Technologies

Türkiye . 410 parts In-Stock

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Overview

Discover the power of the SZMMSZ2V4T3G Zener Diode by Onsemi! With top-notch quality and reliable performance, this product is a game-changer in the electronics industry. Whether you're designing automotive electronics or consumer gadgets, this diode's precise voltage regulation and wide temperature range will ensure optimal functionality. Trust Onsemi's expertise and choose the SZMMSZ2V4T3G for all your circuit protection needs. Unlock innovation and efficiency with this cutting-edge component today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the Zener diode lightweight and durable, ensuring reliable performance.

Working Test Current: 5 mA

With a working test current of 5 mA, this Zener diode is suitable for a wide range of applications, providing stable operation within the specified current range.

Surface Mount: YES

Being surface mountable, this Zener diode offers easy and convenient installation, making it suitable for use in compact electronic devices.

Maximum Voltage Tolerance: 5 %

The 5% maximum voltage tolerance ensures accurate voltage regulation, making this Zener diode ideal for precision electronics applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this Zener diode can withstand high temperature environments, ensuring reliable performance in various applications.

Nominal Reference Voltage: 2.4 V

The 2.4V nominal reference voltage of this Zener diode ensures precise voltage regulation, making it suitable for use in voltage stabilization circuits.

Technical Specifications

Zener Diodes SZMMSZ2V4T3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

2.4 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

SZMMSZ2V4T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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