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SZBZX84C24ET1G

Onsemi

SZBZX84C24ET1G by Onsemi

SZBZX84C24ET1G by Onsemi is a Zener diode with a nominal reference voltage of 24V and max power dissipation of 0.25W. It operates in temperatures ranging from -65 to 150 °C and has a max voltage tolerance of 5.79%. Ideal for applications requiring precise voltage regulation in compact electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,514 parts In-Stock

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Q Components

USA . 6,000 parts In-Stock

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Digiode

USA . 1,165 parts In-Stock

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Ampacity Inc.

Singapore . 936 parts In-Stock

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$0.010

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936

$0.010

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AZTECH Wire

Italy . 37 parts In-Stock

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$20.040

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37

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Component Stockers USA

USA . 340 parts In-Stock

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$99.990

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340

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Perfect Parts

USA . 43,680 parts In-Stock

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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Kulean Microsystems

USA . 7,596 parts In-Stock

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Problanco Electronics

Mexico . 6,430 parts In-Stock

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TANS Electronics

Latvia . 1,676 parts In-Stock

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Corphita

USA . 1,596 parts In-Stock

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SupplyDigital Components

Austria . 598 parts In-Stock

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UHIMA Technologies

Türkiye . 560 parts In-Stock

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Corohmni

South Africa . 179 parts In-Stock

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Overview

Discover the SZBZX84C24ET1G by Onsemi, a top-quality Zener diode that offers reliability and performance you can trust. Manufactured by Onsemi, a renowned leader in semiconductor technology, this diode is perfect for a wide range of applications. With its small outline package and matte tin terminal finish, this product provides excellent voltage tolerance and dynamic impedance. Whether you need it for automotive, industrial, or consumer electronics, the SZBZX84C24ET1G delivers unmatched value and benefits to meet your needs. Trust Onsemi for quality you can depend on.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides good durability and resistance to environmental factors, making this Zener diode suitable for various applications.

Working Test Current: 5 mA

The working test current of 5 mA ensures stable performance and reliable operation of the Zener diode within its specified parameters.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and labor costs during production.

Maximum Power Dissipation: 0.25 W

With a maximum power dissipation of 0.25 W, this Zener diode can handle moderate power levels without overheating, ensuring long-term reliability.

Nominal Reference Voltage: 24 V

The nominal reference voltage of 24 V makes this Zener diode suitable for applications requiring a specific voltage regulation at this level.

Technical Specifications

Zener Diodes SZBZX84C24ET1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

70 ohm

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Maximum Knee Impedance:

250 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Reference Standard:

AEC-Q101; UL RECOGNIZED

Nominal Reference Voltage:

24 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5.79 %

Working Test Current:

5 mA

Trade Compliance

SZBZX84C24ET1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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