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SZ1SMB5934BT3G-VF01

Onsemi

SZ1SMB5934BT3G-VF01 by Onsemi

SZ1SMB5934BT3G-VF01 by Onsemi is a Zener diode with 18.2V reverse test voltage, 24V nominal reference voltage, and 700 ohm max knee impedance. Ideal for applications requiring precise voltage regulation in automotive electronics due to AEC-Q101 compliance and small outline package style.

Median Price

$0.358

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 66 parts In-Stock

1+ parts

$0.361

100+ parts

$0.361

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$0.361

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66

$0.361

$0.361

$0.361

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Rochester

USA . 409 parts In-Stock

1+ parts

-

100+ parts

$0.354

1k+ parts

$0.294

10k+ parts

$0.262

409

-

$0.354

$0.294

$0.262

Distributors (In-Stock)

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Digiode

USA . 315 parts In-Stock

1+ parts

$0.343

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315

$0.343

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Nova Conductors

Japan . 10 parts In-Stock

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$0.354

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$0.354

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Flip Electronics

USA . 66,000 parts In-Stock

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Vyrian

USA . 2,721 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 367 parts In-Stock

1+ parts

$0.082

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367

$0.082

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Ampacity Inc.

Singapore . 66 parts In-Stock

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$0.307

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66

$0.307

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Semicontronic

India . 22 parts In-Stock

1+ parts

$0.307

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$0.299

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$0.298

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22

$0.307

$0.299

$0.298

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Corphita

USA . 153 parts In-Stock

1+ parts

$0.325

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153

$0.325

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Corohmni

South Africa . 453 parts In-Stock

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$0.347

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453

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Continental Prestige Electronics

USA . 1,909 parts In-Stock

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$0.354

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$0.347

1,909

$0.354

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$0.347

Argo Parts USA

USA . 1,803 parts In-Stock

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$0.354

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$0.343

1,803

$0.354

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$0.343

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.354

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$0.336

10k+ parts

$0.329

1,000

$0.354

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$0.336

$0.329

Advanced Electronics

New Zealand . 66 parts In-Stock

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$0.361

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$0.361

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$0.361

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66

$0.361

$0.361

$0.361

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AZTECH Wire

Italy . 315 parts In-Stock

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$5.043

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315

$5.043

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Problanco Electronics

Mexico . 7,448 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Kulean Microsystems

USA . 1,590 parts In-Stock

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TANS Electronics

Latvia . 664 parts In-Stock

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UHIMA Technologies

Türkiye . 642 parts In-Stock

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SupplyDigital Components

Austria . 141 parts In-Stock

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Robosynatics

Brazil . 30 parts In-Stock

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Lucentia Tech

USA . 30 parts In-Stock

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Overview

Discover the superior quality and reliability of Onsemi's SZ1SMB5934BT3G-VF01 Zener Diode. With a focus on innovation and excellence, Onsemi is a leading manufacturer in the industry, ensuring top-notch performance and durability. Ideal for various applications, this Zener diode offers customers unmatched value with its precise voltage regulation, low reverse current, and high temperature range capability. Trust Onsemi for all your Zener diode needs and experience the difference in quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the diode, ensuring its durability and longevity.

Working Test Current: 15.6 mA

A higher working test current allows for efficient performance and reliability of the diode in various electronic circuits.

Maximum Reverse Current: 1 uA

Low maximum reverse current indicates minimal leakage, leading to better overall performance and stability of the diode.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this zener diode can withstand harsh environmental conditions and ensure consistent performance.

Maximum Power Dissipation: 0.55 W

The high maximum power dissipation capability allows the diode to handle significant power loads without getting damaged.

Nominal Reference Voltage: 24 V

The high nominal reference voltage of 24V makes this zener diode suitable for various voltage regulation applications in electronic circuits.

Technical Specifications

Zener Diodes SZ1SMB5934BT3G-VF01 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

19 ohm

Maximum Forward Voltage (VF):

1.5 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Maximum Knee Impedance:

700 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.55 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

24 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

18.2 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

15.6 mA

Trade Compliance

SZ1SMB5934BT3G-VF01 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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