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SM05T3G

Onsemi

SM05T3G by Onsemi

SM05T3G by Onsemi is a Zener diode with 2 elements, offering a max breakdown voltage of 7.3V and common anode configuration. Ideal for transient suppression in electronics, it has a small outline package style and can operate b/w -55 °C to 150°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,922 parts In-Stock

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Vyrian

USA . 1,342 parts In-Stock

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TANS Electronics

Latvia . 7,675 parts In-Stock

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Kulean Microsystems

USA . 5,591 parts In-Stock

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Problanco Electronics

Mexico . 5,291 parts In-Stock

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SupplyDigital Components

Austria . 2,664 parts In-Stock

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UHIMA Technologies

Türkiye . 926 parts In-Stock

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Corphita

USA . 826 parts In-Stock

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Corohmni

South Africa . 329 parts In-Stock

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Overview

Discover the SM05T3G by Onsemi, a top-quality transient suppression device designed to protect your electronic components from voltage spikes and surges. With a common anode configuration and two elements, this small outline package offers reliable surface mount capabilities for a wide range of applications. Onsemi's reputation for excellence ensures that you are getting a product that delivers exceptional performance and durability. Experience peace of mind knowing that your devices are safeguarded against damaging power fluctuations with the SM05T3G, offering unmatched value and protection for your electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the components inside the package, ensuring reliable performance and longevity.

Maximum Non Repetitive Peak Reverse Power Dissipation: 300 W

High power dissipation capability allows the device to handle sudden surges or spikes in the electrical system without getting damaged.

Maximum Operating Temperature: 150 °C

Wide operating temperature range makes the device suitable for various environmental conditions and ensures stable performance.

Minimum Breakdown Voltage: 6.2 V

Low breakdown voltage ensures that the device activates quickly to suppress any overvoltage conditions, protecting sensitive components in the circuit.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The diode type specifically designed for transient voltage suppression ensures effective protection against voltage spikes and surges.

Technical Specifications

Transient Suppression Devices SM05T3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

7.3 V

Minimum Breakdown Voltage:

6.2 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

300 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SM05T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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