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SM05T3

Onsemi

SM05T3 by Onsemi

The Onsemi SM05T3 is a Zener diode with 2 elements, offering a max breakdown voltage of 7.3V and common anode configuration. Ideal for transient suppression in electronics, it has a small outline package with dual terminals and can handle up to 300W peak reverse power dissipation.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Digiode

USA . 345 parts In-Stock

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Vyrian

USA . 190 parts In-Stock

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TANS Electronics

Latvia . 7,024 parts In-Stock

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Problanco Electronics

Mexico . 5,412 parts In-Stock

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Kulean Microsystems

USA . 4,963 parts In-Stock

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SupplyDigital Components

Austria . 3,908 parts In-Stock

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Corphita

USA . 1,585 parts In-Stock

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UHIMA Technologies

Türkiye . 237 parts In-Stock

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Corohmni

South Africa . 62 parts In-Stock

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Overview

Discover the SM05T3 by Onsemi, a top-tier transient suppression device that guarantees high-quality performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product is designed to protect your electronic devices from voltage spikes and surges. With a common anode configuration and two elements, the SM05T3 is versatile and efficient, making it ideal for a wide range of applications. Say goodbye to worries about power fluctuations with this innovative solution that offers exceptional value and peace of mind to customers. Trust Onsemi's expertise and invest in the SM05T3 for superior protection and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and protection for the internal components, making this product reliable for long-term use.

Maximum Non Repetitive Peak Reverse Power Dissipation: 300 W

The high maximum non-repetitive peak reverse power dissipation of 300 W allows this transient suppression device to handle sudden spikes in voltage effectively, protecting the connected circuitry from damage.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this device can withstand high heat environments without compromising its performance, making it suitable for a wide range of applications.

Minimum Breakdown Voltage: 6.2 V

The minimum breakdown voltage of 6.2 V ensures that this transient suppression device activates only when the voltage exceeds this threshold, providing reliable protection against overvoltage events.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes in this device enables it to quickly clamp transient voltage spikes to a safe level, safeguarding the connected circuitry from damage.

Technical Specifications

Transient Suppression Devices SM05T3 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

7.3 V

Minimum Breakdown Voltage:

6.2 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

300 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

SM05T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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