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SM05T1

Onsemi

SM05T1 by Onsemi

SM05T1 by Onsemi is a Zener diode with 2 elements, offering a max clamping voltage of 9.8V and a breakdown voltage range of 6.2-7.3V. Commonly used in transient suppression applications due to its high power dissipation capability of 300W and compact small outline package design for surface mount installations.

Median Price

$0.092

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 11,752 parts In-Stock

1+ parts

-

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$0.092

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$0.077

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$0.068

11,752

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$0.092

$0.077

$0.068

DigiKey

USA . 11,752 parts In-Stock

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$0.120

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$0.120

Verical

USA . 8,752 parts In-Stock

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$0.086

8,752

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$0.086

Distributors (In-Stock)

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Digiode

USA . 1,204 parts In-Stock

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$0.072

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$0.072

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Chip Stock

USA . 46,000 parts In-Stock

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Vyrian

USA . 5,354 parts In-Stock

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NPI Materials, Inc.

USA . 40 parts In-Stock

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Cogito LLC

Ukraine . 13 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 10,667 parts In-Stock

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$0.061

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$0.061

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Corphita

USA . 699 parts In-Stock

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$0.068

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699

$0.068

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Corohmni

South Africa . 474 parts In-Stock

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$0.072

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474

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AZTECH Wire

Italy . 538 parts In-Stock

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$14.090

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538

$14.090

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Continental Prestige Electronics

USA . 11,752 parts In-Stock

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$0.065

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Metaverse IC Inc.

Canada . 8,800 parts In-Stock

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8,800

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Kulean Microsystems

USA . 8,013 parts In-Stock

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TANS Electronics

Latvia . 7,873 parts In-Stock

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SupplyDigital Components

Austria . 7,611 parts In-Stock

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Problanco Electronics

Mexico . 986 parts In-Stock

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986

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UHIMA Technologies

Türkiye . 795 parts In-Stock

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795

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Overview

Discover the power of protection with the SM05T1 by Onsemi. As a leading manufacturer in transient suppression devices, Onsemi delivers quality products that offer unmatched reliability and performance. Ideal for a variety of applications, this common anode, two-element device provides superior voltage clamping capabilities to safeguard your electronics from harmful transients. Experience peace of mind knowing your equipment is shielded from power surges, making the SM05T1 a valuable investment for both professional and DIY projects. Trust Onsemi to deliver the best in transient suppression technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good electrical insulation for added safety and reliability.

Config: COMMON ANODE, 2 ELEMENTS

Allows for effective voltage suppression in both directions, providing comprehensive protection.

Maximum Non Repetitive Peak Reverse Power Dissipation: 300 W

Can handle high power surges without damage, ensuring long-lasting performance.

Nominal Breakdown Voltage: 6.7 V

Ensures that the device activates at the appropriate voltage levels to protect connected equipment.

Surface Mount: YES

Enables easy installation and compact design for space-saving applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient suppression, providing reliable and efficient protection.

Technical Specifications

Transient Suppression Devices SM05T1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

7.3 V

Minimum Breakdown Voltage:

6.2 V

Nominal Breakdown Voltage:

6.7 V

Maximum Clamping Voltage:

9.8 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

300 W

No. of Elements:

2

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

SM05T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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