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SE5230D

Onsemi

SE5230D by Onsemi

SE5230D by Onsemi is an Operational Amplifier with 4000uV Max Input Offset Voltage, 95dB CMRR, and 600kHz Unity Gain Bandwidth. Ideal for automotive applications due to its -40 to 125 °C operating temp range and programmable power feature.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 8,376 parts In-Stock

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Digiode

USA . 656 parts In-Stock

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AZTECH Wire

Italy . 824 parts In-Stock

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$14.910

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Microchip USA

USA . 3,970 parts In-Stock

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TANS Electronics

Latvia . 2,904 parts In-Stock

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Problanco Electronics

Mexico . 1,726 parts In-Stock

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SupplyDigital Components

Austria . 1,305 parts In-Stock

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Kulean Microsystems

USA . 828 parts In-Stock

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Corphita

USA . 779 parts In-Stock

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UHIMA Technologies

Türkiye . 710 parts In-Stock

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Corohmni

South Africa . 69 parts In-Stock

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Overview

Unleash the power of precision with the SE5230D by Onsemi. Crafted with excellence, this operational amplifier delivers unparalleled performance and reliability for a wide range of applications. From automotive to industrial, this versatile amplifier offers superior quality and value, ensuring optimal functionality and efficiency. Experience the advantage of seamless operation and precise control with the SE5230D. Elevate your projects to new heights with Onsemi's commitment to excellence in every detail.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier, making it suitable for a variety of applications.

Maximum Input Offset Voltage: 4000 uV

Low input offset voltage ensures accurate signal processing and reduces errors in the output signal.

Nominal Common Mode Reject Ratio: 95 dB

High common mode rejection ratio helps in eliminating common mode noise and interference, resulting in cleaner output signals.

Nominal Supply Voltage / Vsup (V): 7.5

A stable supply voltage of 7.5V ensures consistent performance of the operational amplifier in various operating conditions.

Power Supplies (V): 1.8/15/+-0.9/+-7.5

Support for multiple power supply voltages allows for flexible use in different systems, enhancing versatility.

Maximum Operating Temperature: 125 °C

Wide operating temperature range of up to 125 °C enables the operational amplifier to function reliably in harsh environmental conditions.

Minimum Voltage Gain: 50000

High minimum voltage gain ensures high amplification capability, making it suitable for applications requiring significant signal amplification.

Nominal Unity Gain Bandwidth: 600 kHz

High unity gain bandwidth ensures stable performance at different gain settings, making it suitable for various frequency applications.

Technical Specifications

Operational Amplifiers (Op Amps) SE5230D attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

1.8/15/±.9/±7.5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Programmable Power:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

600 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

95 dB

Input Offset Voltage Limit:

4000 uV

Minimum Voltage Gain:

50000

Nominal Slew Rate:

0.25 V/us

Peak Bias Current:

300 nA

Maximum Bias Current (IIB) @25 °C:

150 nA

Operational Characteristics

Nominal Supply Voltage:

7.5 V

Maximum Supply Voltage:

9 V

Maximum Negative Supply Voltage:

-7.5 V

Minimum Negative Supply Voltage:

-9 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

235 °C (455 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

1.7 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

SE5230D Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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