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SE5230DG

Onsemi

SE5230DG by Onsemi

SE5230DG by Onsemi is an Operational Amplifier with 4000uV Max Input Offset Voltage, 95dB Nominal CMRR, and 600kHz Unity Gain Bandwidth. Ideal for automotive applications due to its -40 to 125 °C operating temperature range and small outline package style.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 54,000 parts In-Stock

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Vyrian

USA . 6,080 parts In-Stock

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Advanced Electronics

New Zealand . 270 parts In-Stock

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$2.636

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$2.399

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$2.162

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270

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AZTECH Wire

Italy . 931 parts In-Stock

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$12.090

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Component Stockers USA

USA . 217 parts In-Stock

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$99.990

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Kulean Microsystems

USA . 6,174 parts In-Stock

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Microchip USA

USA . 3,546 parts In-Stock

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TANS Electronics

Latvia . 2,921 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 928 parts In-Stock

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Perfect Parts

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UHIMA Technologies

Türkiye . 454 parts In-Stock

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Problanco Electronics

Mexico . 244 parts In-Stock

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South Africa . 52 parts In-Stock

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Overview

Enhance your electronic designs with the SE5230DG by Onsemi, a top-quality operational amplifier perfect for a wide range of applications. From automotive to industrial settings, this small outline op amp offers unparalleled performance and reliability. With a nominal common mode reject ratio of 95 dB and a maximum input offset voltage of 4000 uV, you can trust this product to deliver superior results every time. Don't settle for less when you can have the best - choose the SE5230DG for all your amplification needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the operational amplifier, ensuring long-term reliability.

Maximum Input Offset Voltage: 4000 uV

Low input offset voltage helps in reducing errors in the amplifier circuit, leading to accurate output signals.

Nominal Common Mode Reject Ratio: 95 dB

High common mode rejection ratio ensures that noise and interference from the input signal are minimized, resulting in a clean output.

Nominal Supply Voltage / Vsup (V): 7.5

A stable supply voltage ensures consistent performance of the operational amplifier in various operating conditions.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows the operational amplifier to function efficiently in extreme temperature environments.

Nominal Unity Gain Bandwidth: 600 kHz

A high unity gain bandwidth indicates that the operational amplifier can handle a wide range of frequencies with minimal distortion.

Technology: BIPOLAR

Bipolar technology offers high precision and low noise performance, making it suitable for sensitive applications.

Technical Specifications

Operational Amplifiers (Op Amps) SE5230DG attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Technology:

BIPOLAR

Total Functions:

1

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Unity Gain Bandwidth:

600 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

95 dB

Input Offset Voltage Limit:

4000 uV

Nominal Slew Rate:

0.25 V/us

Peak Bias Current:

300 nA

Operational Characteristics

Nominal Supply Voltage:

7.5 V

Maximum Supply Voltage:

9 V

Maximum Negative Supply Voltage:

-7.5 V

Minimum Negative Supply Voltage:

-9 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Trade Compliance

SE5230DG Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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