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SCNLVHC4851ADTR2G

Onsemi

SCNLVHC4851ADTR2G by Onsemi

SCNLVHC4851ADTR2G by Onsemi is an AEC-Q100 qualified CMOS multiplexer with 8 channels, 3-6 V supply voltage range, and 1100 ohm max on-state resistance. It is ideal for military-grade applications requiring common output, dual terminal position, and fast switching times of 300 ns. The small outline package with a thin profile and shrink pitch makes it suitable for space-constrained designs in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Flip Electronics

USA . 600,000 parts In-Stock

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Vyrian

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Prism Electronics

USA . 2,500 parts In-Stock

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Digiode

USA . 1,082 parts In-Stock

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AZTECH Wire

Italy . 881 parts In-Stock

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 6,749 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,534 parts In-Stock

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Kulean Microsystems

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TANS Electronics

Latvia . 3,839 parts In-Stock

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UHIMA Technologies

Türkiye . 978 parts In-Stock

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Problanco Electronics

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Microchip USA

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Corohmni

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Corphita

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Overview

Discover the SCNLVHC4851ADTR2G by Onsemi, a top-of-the-line multiplexer and switch that guarantees high-quality performance. With a robust manufacturing process and AEC-Q100 screening level, this product is designed for reliability in demanding applications. Whether you're in automotive, industrial, or consumer electronics, this versatile device offers unmatched value with its common output, low on-state resistance, and fast switching times. Trust Onsemi to deliver cutting-edge technology that brings efficiency and precision to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable applications.

Surface Mount: YES

Being surface mountable increases flexibility in mounting options and allows for easier integration into circuit boards.

Nominal Supply Voltage (Vsup): 3 V

The 3V nominal supply voltage is commonly used in many electronic systems, making this product compatible with a wide range of applications.

No. of Channels: 8

Having 8 channels allows for multiple inputs to be switched or multiplexed, providing greater flexibility in signal routing.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product efficient and reliable in signal switching applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures reliable performance even in harsh environments.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows the product to be used in a wide range of temperature conditions.

Technical Specifications

Multiplexers & Switches SCNLVHC4851ADTR2G attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

Maximum Input Voltage:

6 V

Minimum Input Voltage:

0 V

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

5 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

8

No. of Functions:

1

No. of Terminals:

16

Nominal On-state Resistance Match:

160 ohm

Maximum On-state Resistance (Ron):

1100 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output (V):

COMMON OUTPUT

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Maximum Signal Current:

.025 A

Maximum Supply Current (Isup):

.04 mA

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Maximum Switch-off Time:

300 ns

Maximum Switch-on Time:

300 ns

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

4.4 mm

Trade Compliance

SCNLVHC4851ADTR2G Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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