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SBS818-TL-E

Onsemi

SBS818-TL-E by Onsemi

SBS818-TL-E by Onsemi is a Schottky rectifier diode with 2 elements, offering a max output current of 1.5A and a max reverse recovery time of 0.01us. This small outline package diode has a reverse test voltage of 15V and is ideal for applications requiring fast switching speeds in temperature ranges from -55 to 125 °C.

Median Price

$0.260

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 40 parts In-Stock

1+ parts

$0.067

100+ parts

$0.061

1k+ parts

$0.055

10k+ parts

-

40

$0.067

$0.061

$0.055

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Rochester

USA . 39,000 parts In-Stock

1+ parts

-

100+ parts

$0.291

1k+ parts

$0.241

10k+ parts

$0.215

39,000

-

$0.291

$0.241

$0.215

DigiKey

USA . 39,000 parts In-Stock

1+ parts

-

100+ parts

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$0.250

39,000

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-

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$0.250

Verical

USA . 36,000 parts In-Stock

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$0.269

36,000

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$0.269

Distributors (In-Stock)

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Digiode

USA . 2,052 parts In-Stock

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$0.064

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2,052

$0.064

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Vyrian

USA . 2,251 parts In-Stock

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$0.067

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2,251

$0.067

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Nova Conductors

Japan . 73 parts In-Stock

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$0.213

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73

$0.213

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,477 parts In-Stock

1+ parts

$0.060

100+ parts

-

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1,477

$0.060

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Corohmni

South Africa . 281 parts In-Stock

1+ parts

$0.067

100+ parts

-

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281

$0.067

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Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$0.067

100+ parts

$0.061

1k+ parts

$0.055

10k+ parts

-

40

$0.067

$0.061

$0.055

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Continental Prestige Electronics

USA . 39,000 parts In-Stock

1+ parts

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100+ parts

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$0.230

10k+ parts

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39,000

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$0.230

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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Problanco Electronics

Mexico . 6,874 parts In-Stock

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6,874

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Kepictronics

USA . 5,633 parts In-Stock

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Kulean Microsystems

USA . 4,240 parts In-Stock

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TANS Electronics

Latvia . 1,549 parts In-Stock

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UHIMA Technologies

Türkiye . 456 parts In-Stock

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456

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SupplyDigital Components

Austria . 390 parts In-Stock

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390

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Perfect Parts

USA . 185 parts In-Stock

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Overview

Discover the power of innovation with the SBS818-TL-E by Onsemi. As a leader in diodes & rectifiers, Onsemi delivers high-quality products that exceed industry standards. This versatile component offers customers unrivaled performance and reliability, making it ideal for a wide range of applications. From automotive to consumer electronics, the SBS818-TL-E provides exceptional value and efficiency. Upgrade your projects with Onsemi's cutting-edge technology and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the diodes, ensuring a longer lifespan.

Config: SEPARATE, 2 ELEMENTS

Having separate elements allows for better control and efficiency in the circuit.

Surface Mount: YES

Allows for easy and convenient installation on PCBs, saving space and reducing assembly time.

Maximum Reverse Recovery Time: 0.01 us

This fast recovery time ensures minimal power loss and improves overall efficiency.

Maximum Reverse Current: 350 uA

Low reverse current helps reduce power consumption and improves performance.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement in circuits and on PCBs.

Reverse Test Voltage: 15 V

With a high reverse test voltage, this diode can withstand high voltage applications.

No. of Terminals: 8

Having 8 terminals provides flexibility in circuit design and connection options.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on PCBs, ideal for compact designs.

Maximum Operating Temperature: 125 °C

High operating temperature allows for use in a wide range of environmental conditions.

Minimum Operating Temperature: -55 °C

Low operating temperature ensures reliability even in extreme cold conditions.

Terminal Finish: TIN BISMUTH

Tin Bismuth finish provides good conductivity and corrosion resistance.

Terminal Position: DUAL

Dual terminal position offers flexibility in mounting and connection options.

Diode Type: RECTIFIER DIODE

Rectifier diode is ideal for converting AC to DC in power supply applications.

Maximum Forward Voltage (VF): 0.52 V

Low forward voltage drop ensures efficient power conversion with minimal losses.

Maximum Output Current: 1.5 A

High output current capability allows for use in a wide range of power applications.

Technology: SCHOTTKY

Schottky technology provides fast switching speed and low forward voltage drop.

Terminal Form: FLAT

Flat terminal form ensures easy and secure soldering connections.

No. of Elements: 2

Having 2 elements provides redundancy and improves reliability in the circuit.

Maximum Repetitive Peak Reverse Voltage: 30 V

High reverse voltage rating allows for use in high voltage applications.

Maximum Non Repetitive Peak Forward Current: 20 A

High peak forward current rating ensures reliability in high current situations.

Diode Element Material: SILICON

Silicon material provides good thermal stability and reliability in operation.

Technical Specifications

Diodes & Rectifiers SBS818-TL-E attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

GENERAL PURPOSE

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.52 V

JESD-30 Code:

R-PDSO-F8

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

20 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

350 uA

Maximum Reverse Recovery Time:

.01 us

Reverse Test Voltage:

15 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN BISMUTH

Terminal Form:

Terminal Position:

Trade Compliance

SBS818-TL-E Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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