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SBS811-TL-E

Onsemi

SBS811-TL-E by Onsemi

SBS811-TL-E by Onsemi is a Schottky rectifier diode with 2 elements, offering a max output current of 2A and forward voltage of 0.4V. With a reverse test voltage of 15V and fast recovery time of 0.02us, it is ideal for applications requiring high efficiency power conversion in compact electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,463 parts In-Stock

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Digiode

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Advanced Electronics

New Zealand . 60 parts In-Stock

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$0.065

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$0.059

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$0.053

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60

$0.065

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Component Stockers USA

USA . 412 parts In-Stock

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$99.990

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TANS Electronics

Latvia . 8,191 parts In-Stock

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Kulean Microsystems

USA . 8,042 parts In-Stock

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Perfect Parts

USA . 6,567 parts In-Stock

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SupplyDigital Components

Austria . 4,290 parts In-Stock

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Corphita

USA . 1,609 parts In-Stock

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UHIMA Technologies

Türkiye . 491 parts In-Stock

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Corohmni

South Africa . 469 parts In-Stock

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Problanco Electronics

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Overview

Discover the powerful performance of the SBS811-TL-E by Onsemi, a top-quality diode and rectifier that sets the standard for efficiency and reliability. Crafted by the renowned manufacturer, Onsemi, this product boasts a range of applications and benefits that cater to the needs of various industries. With its cutting-edge technology and superior design, customers can expect seamless operation and long-lasting durability. Elevate your projects with the SBS811-TL-E and experience the difference in quality and value that Onsemi brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the diodes, ensuring a longer lifespan.

Maximum Reverse Recovery Time: 0.02 us

The fast reverse recovery time helps in reducing switching losses and improving efficiency in applications where fast rectification is needed.

Maximum Forward Voltage (VF): 0.4 V

The low forward voltage drop of 0.4 V ensures minimal power loss and efficient operation of the diode.

Technology: SCHOTTKY

The Schottky technology offers lower forward voltage drop and faster switching speeds compared to standard silicon diodes, making it ideal for high-frequency applications.

Technical Specifications

Diodes & Rectifiers SBS811-TL-E attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

GENERAL PURPOSE

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.4 V

JESD-30 Code:

R-PDSO-F8

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

10 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

1250 uA

Maximum Reverse Recovery Time:

.02 us

Reverse Test Voltage:

15 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN BISMUTH

Terminal Form:

Terminal Position:

Trade Compliance

SBS811-TL-E Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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