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SA40ALF

Onsemi

SA40ALF by Onsemi

SA40ALF by Onsemi is a Zener diode with 40V max repetitive peak reverse voltage and 500W non-repetitive peak reverse power dissipation. Ideal for transient suppression applications, it has a breakdown voltage range of 44.4-49.1V and operates b/w -55 to 175 °C temperature range.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,132 parts In-Stock

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Digiode

USA . 1,567 parts In-Stock

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Kulean Microsystems

USA . 7,589 parts In-Stock

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Problanco Electronics

Mexico . 7,583 parts In-Stock

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SupplyDigital Components

Austria . 5,637 parts In-Stock

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Corphita

USA . 1,943 parts In-Stock

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UHIMA Technologies

Türkiye . 948 parts In-Stock

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TANS Electronics

Latvia . 548 parts In-Stock

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Corohmni

South Africa . 189 parts In-Stock

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Overview

Discover the high-quality SA40ALF transient suppression device from Onsemi, a leading manufacturer known for its reliable products. Ideal for a wide range of applications, this single-configured device offers maximum protection with its impressive 500W peak reverse power dissipation and 46.55V nominal breakdown voltage. With a round package shape and UL recognized reference standard, this Zener technology diode ensures peace of mind in any project. Trust in Onsemi's expertise and invest in the SA40ALF for superior performance and long-lasting reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 500 W

Capable of handling high power surges and transient events, ensuring reliable operation.

Nominal Breakdown Voltage: 46.55 V

Offers effective voltage regulation and protection against overvoltage conditions.

Technology: ZENER

Utilizes Zener diode technology for precise voltage regulation and transient suppression.

Maximum Clamping Voltage: 64.5 V

Provides efficient clamping of transient voltages, safeguarding connected devices from damage.

Technical Specifications

Transient Suppression Devices SA40ALF attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, LOW IMPEDANCE

Maximum Breakdown Voltage:

49.1 V

Minimum Breakdown Voltage:

44.4 V

Nominal Breakdown Voltage:

46.55 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

64.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

3 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

40 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

SA40ALF Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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