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SA40AG

Onsemi

SA40AG by Onsemi

SA40AG by Onsemi is a Zener technology Trans Voltage Suppressor Diode with 500W peak power dissipation, 46.55V breakdown voltage, and 64.5V clamping voltage. Ideal for transient suppression in electronics to protect against voltage spikes and surges.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 771 parts In-Stock

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Digiode

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SupplyDigital Components

Austria . 4,791 parts In-Stock

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Kulean Microsystems

USA . 3,081 parts In-Stock

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Problanco Electronics

Mexico . 2,914 parts In-Stock

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Corphita

USA . 2,472 parts In-Stock

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TANS Electronics

Latvia . 2,321 parts In-Stock

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UHIMA Technologies

Türkiye . 308 parts In-Stock

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Corohmni

South Africa . 302 parts In-Stock

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Overview

Enhance your electronics with the SA40AG transient suppression device from Onsemi. Manufactured with top-quality materials and advanced technology, this product ensures reliable protection against voltage spikes and surges. Ideal for a wide range of applications, this single-configured device offers peace of mind and durability. With a maximum clamping voltage of 64.5V and a nominal breakdown voltage of 46.55V, the SA40AG provides superior performance in a compact package. Trust Onsemi to deliver exceptional quality and value with every product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and protection against external elements, making it suitable for a variety of environments.

Maximum Non Repetitive Peak Reverse Power Dissipation: 500 W

With a high maximum power dissipation capacity of 500 W, this transient suppression device can handle sudden surges or spikes in power effectively without getting damaged.

Nominal Breakdown Voltage: 46.55 V

The nominal breakdown voltage of 46.55 V ensures reliable protection against voltage spikes by clamping the voltage at a safe level.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature of 175 °C allows this device to function effectively in demanding and high-temperature environments.

Reference Standard: UL RECOGNIZED

Being UL Recognized ensures that this product meets the necessary safety and performance standards, providing assurance of quality and reliability.

Technical Specifications

Transient Suppression Devices SA40AG attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Breakdown Voltage:

49.1 V

Minimum Breakdown Voltage:

44.4 V

Nominal Breakdown Voltage:

46.55 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

64.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

3 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

40 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SA40AG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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