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S3GB

Onsemi

S3GB by Onsemi

S3GB by Onsemi is a single rectifier diode with a max reverse recovery time of 1.5 us and a max output current of 3A. It is designed for applications requiring a small outline package, such as automotive electronics or power supplies.

Median Price

$0.156

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 263 parts In-Stock

1+ parts

$0.162

100+ parts

$0.101

1k+ parts

$0.068

10k+ parts

$0.060

263

$0.162

$0.101

$0.068

$0.060

Adafruit Industries

USA . 2,500 parts In-Stock

1+ parts

$0.171

100+ parts

$0.156

1k+ parts

$0.140

10k+ parts

-

2,500

$0.171

$0.156

$0.140

-

Mouser Electronics

USA . 106 parts In-Stock

1+ parts

$0.730

100+ parts

$0.289

1k+ parts

$0.197

10k+ parts

$0.136

106

$0.730

$0.289

$0.197

$0.136

Farnell

UK . 5,735 parts In-Stock

1+ parts

-

100+ parts

$0.105

1k+ parts

$0.053

10k+ parts

$0.046

5,735

-

$0.105

$0.053

$0.046

Element14

Singapore . 5,735 parts In-Stock

1+ parts

-

100+ parts

$0.153

1k+ parts

$0.076

10k+ parts

$0.066

5,735

-

$0.153

$0.076

$0.066

DigiKey

USA . 5,375 parts In-Stock

1+ parts

-

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$0.099

5,375

-

-

-

$0.099

Arrow

USA . 3,000 parts In-Stock

1+ parts

-

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$0.120

3,000

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-

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$0.120

Verical

USA . 3,000 parts In-Stock

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-

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$0.170

3,000

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-

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$0.170

Rochester

USA . 622 parts In-Stock

1+ parts

-

100+ parts

$0.156

1k+ parts

$0.130

10k+ parts

$0.116

622

-

$0.156

$0.130

$0.116

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,019 parts In-Stock

1+ parts

$0.012

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2,019

$0.012

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Vyrian

USA . 4,931 parts In-Stock

1+ parts

$0.013

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4,931

$0.013

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Chip Stock

USA . 31,000 parts In-Stock

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Flip Electronics

USA . 27,000 parts In-Stock

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27,000

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Sunrise Surplus Inc.

USA . 2,814 parts In-Stock

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2,814

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Distributors (Availability)

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Corphita

USA . 2,804 parts In-Stock

1+ parts

$0.012

100+ parts

-

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2,804

$0.012

-

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Corohmni

South Africa . 316 parts In-Stock

1+ parts

$0.013

100+ parts

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316

$0.013

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Component Stockers USA

USA . 739 parts In-Stock

1+ parts

$0.030

100+ parts

$0.030

1k+ parts

$0.150

10k+ parts

-

739

$0.030

$0.030

$0.150

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$0.171

100+ parts

$0.156

1k+ parts

$0.140

10k+ parts

-

2,500

$0.171

$0.156

$0.140

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Continental Prestige Electronics

USA . 1,235 parts In-Stock

1+ parts

$0.184

100+ parts

$0.105

1k+ parts

$0.053

10k+ parts

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1,235

$0.184

$0.105

$0.053

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Metaverse IC Inc.

Canada . 100,000 parts In-Stock

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Kepictronics

USA . 85,400 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 23,174 parts In-Stock

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Eastek

USA . 9,000 parts In-Stock

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Problanco Electronics

Mexico . 5,898 parts In-Stock

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TANS Electronics

Latvia . 5,086 parts In-Stock

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Kulean Microsystems

USA . 4,585 parts In-Stock

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4,585

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SupplyDigital Components

Austria . 2,616 parts In-Stock

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Glotronic Ltd.

UK . 941 parts In-Stock

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Supply Digital

USA . 756 parts In-Stock

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756

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UHIMA Technologies

Türkiye . 405 parts In-Stock

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Perfect Parts

USA . 11 parts In-Stock

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11

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Overview

Discover the superior quality and reliability of the S3GB diode by Onsemi, a leading manufacturer in the industry. Perfect for a wide range of applications, this single configuration diode offers a fast maximum reverse recovery time of 1.5 us and a high maximum output current of 3 A. With a compact package style and durable construction, this diode provides exceptional performance in temperatures ranging from -55°C to 150°C. Trust Onsemi's S3GB to deliver the value, benefits, and advantages you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection to the diode, making it suitable for various applications.

Maximum Reverse Recovery Time: 1.5 us

The fast reverse recovery time ensures efficient switching performance, which is crucial for high-speed applications.

Maximum Reverse Current: 10 uA

Low reverse current minimizes power losses and improves overall efficiency of the diode.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the diode to operate reliably in a wide range of temperature conditions.

Maximum Forward Voltage (VF): 1.15 V

The low forward voltage drop reduces power dissipation and improves energy efficiency of the diode.

Maximum Output Current: 3 A

The high maximum output current capacity makes this diode suitable for applications requiring higher current levels.

Technical Specifications

Diodes & Rectifiers S3GB attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.15 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

10 uA

Maximum Reverse Recovery Time:

1.5 us

Reverse Test Voltage:

400 V

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

S3GB Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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